A comprehensive analysis of NFET degradation due to off-state stress

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2004, Pages 94-98

  Hofmann, K ^a   Holzhauser, S ^a   Kuo, C Y ^a,b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b NANYA TECHNOLOGY CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON TRAPS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; IONIZATION; LITHOGRAPHY; MICROPROCESSOR CHIPS; RANDOM ACCESS STORAGE; STRESS ANALYSIS; THRESHOLD VOLTAGE;

MICROPROCESSOR UNITS (MPU); NON-CONDUCTING STRESS (NCS); OFF-STATE STRESS; STRESS VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 21644437020     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. G. Moore, E. Korczynski, "Moores Law extended: The return of cleverness", Solid State Technol., p. 354 (July 1997)
2. public.itrs.net/Files/2003ITRS/Home2003.htm
3. C. Hu, S. Tam, F. Hsu, P. Ko, T. Chan, K. Terrill, "Hot-Electron-Induced MOSFET Degradation - Model, Monitor and Improvement", IEEE Trans. On Elec. Dev., ED-32, p. 375 (1985)
4. S. Chakravarthi, A. Krishnan, V. Reddy, C. Machala, S. Krishnan, "A comprehensive framework for predictive modeling of negative bias temperature instability", 2004 IEEE International Reliability Physics Symposium, 42nd Annual, p. 273-282 (2004)
5. A. Kieslich et. al. to be published IEDM 2004.
6. Y. Taur, T, Ning: "Fundamentals of modern VLSI devices", Cambridge University press, 1998.
7. B.S. Doyle et al., "The Generation and Characterization of Electron and Hole Traps Created by Hole Injection During Low Gate Voltage Hot-Carrier Stressing of n-MOS Transistors", IEEE Trans On Elec. Dev.,37, p. 1869 (1990).
8. H. Haddara, S. Cristoloveanu, "Two-Dimensional Modeling of Locally Damaged Short-Channel MOSFETs Operating in the Linear Region", IEEE Trans. On Elec. Dev. ED-34, 378 (1987)
9. A. Muehlhoff, "An Extrapolation Model for Lifetime Prediction for Off - State Degradation of MOS-FETs",Microelectronics Reliability, 41, 1289 (2001)