Generalized models for optimization of BTI in SiON and high-k dielectrics

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 665-666

  Haggag, A ^a   Kalpat, S ^a   Moosa, M ^a   Liu, N ^a   Kuffler, M ^a   Tseng, H H ^a   Luo, T Y ^a   Schaeffer, J ^a   Gilmer, D ^a   Samavedam, S ^a   Hegde, R ^a   White Jr , B E ^a   Tobin, P J ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACKS; INTERFACIAL LAYERS; UNIVERSAL CURVES;

MATHEMATICAL MODELS; OPTIMIZATION; RELIABILITY; SILICON COMPOUNDS;

DIELECTRIC MATERIALS;

EID: 34250693586     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251314     Document Type: Conference Paper

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