Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation

ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

Volumn , Issue , 2009, Pages 92-95

  Drapatz, Stefan ^a   Fischer, Thomas ^a   Hofmann, Karl ^b   Amirante, Ettore ^b   Huber, Peter ^b   Ostermayr, Martin ^b   Georgakos, Georg ^b   Schmitt Landsiedel, Doris ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CELL SIMULATION; FAST TEST; LARGE ARRAYS; LOW POWER TECHNOLOGIES; MEASUREMENT TIME; NEGATIVE BIAS TEMPERATURE INSTABILITY; READ MARGIN; STABILITY ANALYSIS; STATIC NOISE MARGIN; SUPPLY VOLTAGES; TEST-STRUCTURE;

NEGATIVE TEMPERATURE COEFFICIENT; THERMODYNAMIC STABILITY;

STATIC RANDOM ACCESS STORAGE;

EID: 72849141697     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2009.5325952     Document Type: Conference Paper

References (7)

1. E. Seevinck, F. List, and J. Lohstroh, Static Noise Margin Analysis of MOS SRAM Cells, IEEE Journal of Solid State Circuits, Vol. 22, pp. 748-754, 1987
2. Z. Guo et al., Large-Scale Read/Write Margin Measurement in 45nm CMOS SRAM Arrays, IEEE Symposium on VLSI Ciruits, pp. 42-43, 2008
3. S. Drapatz, G. Georgakos, and D. Schmitt-Landsiedel, Impact of Negative and Positive Bias Temperature Stress on 6T-SRAM Cells, Advances in Radio Science, 2009
4. Z. Luo et al., High Performance and Low Power Transistors Integrated in 65nm Bulk CMOS Technology, Electron Devices Meeting, 2004
5. T. Fischer et al., Analysis of Read Current and Write Trip Voltage Variability From a 1MB SRAM test structure, IEEE Transactions on Semiconductor Manufacturing, pp. 534-541, 2008
6. M. Sharifkhani, and M. Sachdev, SRAM Cell Stability: A Dynamic Perspective, IEEE Journal of Solid-State Circuits, Vol. 44, No. 2, pp.609-619, Feb 2009
7. T. Fischer et al., A 65nm teststructure for the analysis of NBTI induced statistical variations in SRAM transistors, Proceedings of the European Solid State Device Research Conference, pp. 51-54, 2008