SCOPUS 정보 검색 플랫폼

Volumn , Issue , 2004, Pages 132-135

Recovery of NBTI degradation in HfSiON/metal gate transistors

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; ELECTRODES; HAFNIUM COMPOUNDS; MATHEMATICAL MODELS; SILICA; THERMAL STRESS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DE-TRAPPING; DIELECTRIC FIELD STRENGTHS; ELECTRON TRAPPING; NEGATIVE BIAS AND TEMPERATURE STRESS (NBTI);

GATES (TRANSISTOR);

EID: 21644481711 PISSN: 19308841 EISSN: 23748036 Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (3)

References (9)

1
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- Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
- D. Shroder and J. Babcock, "Negative bias temperature instability: road to cross in deep submicron silicon semiconductor manufacturing," JAP 94, 2003.
- (2003) JAP 94
- Shroder, D.¹ Babcock, J.²

2
- 15544373212
- Relaxation of FN stress induced Vth shift at NMOSFETS with HfSiOn Gate dielectric and TiN Gate electrode
- R. Choi, B.H. Lee, K. Matthews, J. Sim, G. Bersuker, L. Larson and J. Lee, "Relaxation of FN stress induced Vth shift at NMOSFETS with HfSiOn Gate dielectric and TiN Gate electrode," Proceedings of the DRC, 2004.
- (2004) Proceedings of the DRC
- Choi, R.¹ Lee, B.H.² Matthews, K.³ Sim, J.⁴ Bersuker, G.⁵ Larson, L.⁶ Lee, J.⁷

3
- 85190246389
- IRPS tutorial
- D. Shroder, IRPS Tutorial, IRPS proceedings, 2004.
- (2004) IRPS Proceedings
- Shroder, D.¹

4
- 17644439238
- Characterization and comparison of the chage trapping in HfSiON and HfO2 gate dielectrics
- A. Shanware, M. Visokay, A. Rotondaro, J. McPherson, L. Colombo, "Characterization and comparison of the chage trapping in HfSiON and HfO2 gate dielectrics," IEDM Proceedings, p. 939, 2003.
- (2003) IEDM Proceedings , pp. 939
- Shanware, A.¹ Visokay, M.² Rotondaro, A.³ McPherson, J.⁴ Colombo, L.⁵

5
- 26444593654
- Tmperature effect of constant bias stress on NFETs with Hf-based gate dielectric
- R. Choi, B.H. Lee, C. Young, J. Sim, G. Bersuker, "Tmperature effect of constant bias stress on NFETs with Hf-based gate dielectric," SSDM 2004.
- SSDM 2004
- Choi, R.¹ Lee, B.H.² Young, C.³ Sim, J.⁴ Bersuker, G.⁵

6
- 0034429388
- Negative bias temperature instability (NBTI) in deep submicron p+-gate pMOSFETs
- Y.F. Chen, M.H. Lin, C.H. Chou, W.C. Chang, S.C. Hunag, Y.J. Chang, K.Y. Fu, M.T. Lee, S.K. Fan, "Negative bias temperature instability (NBTI) in deep submicron p+-gate pMOSFETs." IRW Final Report, p. 98, 2000.
- (2000) IRW Final Report , pp. 98
- Chen, Y.F.¹ Lin, M.H.² Chou, C.H.³ Chang, W.C.⁴ Hunag, S.C.⁵ Chang, Y.J.⁶ Fu, K.Y.⁷ Lee, M.T.⁸ Fan, S.K.⁹

7
- 0842309776
- Universal recovery behavior of negative bias temperature instability
- S. Rangan, N, Mielke, E. Yeh, "Universal recovery behavior of negative bias temperature instability," IEDM proceedings, p. 341 2003.
- (2003) IEDM Proceedings , pp. 341
- Rangan, S.¹ Mielke, N.² Yeh, E.³

8
- 0842266644
- A new observation of enhanced bias temperature instability in thin gate oxide pMOSFETs
- S. Mahapatra, P. Kumar, M. Alam, "A new observation of enhanced bias temperature instability in thin gate oxide pMOSFETs," IEDM proceedings, p. 337, 2003.
- (2003) IEDM Proceedings , pp. 337
- Mahapatra, S.¹ Kumar, P.² Alam, M.³

9
- 14644439545
- C.D. Young, et al, IRPS, p. 597, 2004.
- (2004) IRPS , pp. 597
- Young, C.D.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.