Towards 19% efficient industrial PERC devices using simultaneous front emitter and rear surface passivation by thermal oxidation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 34-38

  Mack, Sebastian ^a   Jäger, Ulrich ^a   Kastner, Gero ^a   Wotke, Edgar Allan ^a   Belledin, Udo ^a   Wolf, Andreas ^a   Preu, Ralf ^a   Biro, Daniel ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACK SURFACE FIELDS; BORON-DOPED; CURRENT CELLS; CZOCHRALSKI; FRONT SURFACES; HIGH EFFICIENCY; INDUSTRIAL FABRICATION; INITIAL EFFICIENCY; INTERNAL QUANTUM EFFICIENCY; P-TYPE WAFER; PRODUCTION EFFORTS; REAR SURFACES; REDUCTION POTENTIAL; SACRIFICIAL LAYER; SCREEN-PRINTED; SELECTIVE EMITTERS; SIMPLE APPROACH; SOLAR CELL EFFICIENCIES; SOLAR CELL STRUCTURES; THERMAL OXIDATION; THERMAL OXIDES; THERMALLY GROWN OXIDE; THIN LAYERS; WET-CHEMICAL ETCHING;

BORON; COST REDUCTION; DOPING (ADDITIVES); INDUSTRIAL APPLICATIONS; INDUSTRY; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SOLAR CELLS; WET ETCHING;

PASSIVATION;

EID: 78650136975     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614048     Document Type: Conference Paper

References (18)

1. A. W. Blakers et al., "22.8% efficient silicon solar cell", Appl. Phys. Lett. 55, 1989, pp. 1363-1365.
2. F. Book, B. Raabe, and G. Hahn, "Two diffusion step selective emitter: comparison of mask opening by laser or etching paste", Proceedings of the 23rd European Photovoltaic Solar Energy Conference, 2008, pp. 1546-1549.
3. A. Dastgheib-Shirazi et al., "Selective emitter for industrial solar cell production: a wet chemical approach using a single side diffusion process", Proceedings of the 23rd European Photovoltaic Solar Energy Conference, 2008, pp. 1197-1199.
4. U. Jager et al., "Selective emitter by laser doping from phosphosilicate glass", Proceedings of the 24th European Photovoltaic Solar Energy Conference, 2009, pp. 1740- 1743.
5. T. Lauermann et al., "INSECT: An inline selective emitter concept with high efficiencies at competitive process costs improved with inkjet masking technology", Proceedings of the 24th European Photo voltaic Solar Energy Conference, 2009, pp. 1767-1770.
6. M. Weiß et al., "Selective emitter from structured diffusion source proves its capability in industrial realization", Proceedings of the 24th European Photovo/taic Solar Energy Conference, 2009, pp. 1941-1944.
7. 2 Interface Parameters and their Impact on Device Performance", Prog. Photo volt: Res. Appl. 2, 1994, pp. 265-273.
8. J. Rentsch et al., "Single side etching - key technology for industrial high efficiency processing", Proceedings of the 23rd European Photo voltaic Solar Energy Conference, 2008, pp. 1889-1892.
9. E. Schneiderlochner et al., "Laser-fired contacts (LFC)", Proceedings of the 17th European Photovoltaic Solar Energy Conference, 2001, pp. 1303-1306.
10. J. Rentsch et al., "Technology route towards industrial application of rear passivated silicon solar cells", 4th World Conference on Photovoltaic Energy Conversion, 2006, pp. 1008-1011.
11. D. Biro et al., "PV-Tec: retrospection to the three years of operation of a production oriented research platform", Proceedings of the 24th European Photovoltaic Solar Energy Conference, 2009, pp. 1901-1905.
12. M. Spitz, U. Belledin, and S. Rein, "Fast inductive inline measurement of the emitter sheet resistance in industrial solar cell fabrication", Proceedings of the 22nd European Photo voltaic Solar Energy Conference, 2007, pp. 47-50.
13. R. A. Sinton, A. Cuevas, and M. Stuckings, "Ouasisteady- state photoconductance, a new method for solar cell material and device characterization", Proceedings of the 25th IEEE Photovoltaic Specialists Conference, 1996, pp. 457-460.
14. A. B. Sproul, "Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors", J. Appl. Phys. 76, 1994, pp. 2851-2854.
15. M. J. Kerr and A. Cuevas, "General parameterization of Auger recombination in crystalline silicon", J. Appl. Phys. 91, 2002, pp. 2473-2480.
16. H. F. W. Dekkers and G. Beaucarne, "Molecular hydrogen formation in hydrogenated silicon nitride", Appl. Phys. Lett. 89, 2006, pp. 1-3.
17. J. Schmidt and K. Bothe, "Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon", Phys. Rev. B 69, 2004, pp. 0241071-0241078.
18. B. Fischer et al., "Scanning IOE-measurement for accurate current determination on very large area solar cells", Proceedings of the 29th IEEE Photovoltaics Specialists Conference, 2002, pp. 454-457.