Purified steam for industrial thermal oxidation processes

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 3527-3530

  Mack, Sebastian ^a   Biro, Daniel ^a   Wolf, Andreas ^a   Thaidigsmann, Benjamin ^a   Walczak, Alexandra ^a   Spiegelman, Jeffrey J ^b   Preu, Ralf ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b RASIRC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRY OXYGEN; FORMING GAS; LOW RESISTIVITY; NEW APPROACHES; ORDER OF MAGNITUDE; OXYGEN GAS; P-TYPE SUBSTRATES; PROCESS TIME; REAR SURFACES; SILICON SURFACES; STATE OF THE ART; STEAM GENERATION; SURFACE RECOMBINATION VELOCITIES; THERMAL OXIDATION PROCESS; THERMAL OXIDES; THICK THERMAL OXIDES;

DEIONIZED WATER; OXIDATION; OXYGEN; PASSIVATION; PHOTOVOLTAIC EFFECTS; PURIFICATION; PYROLYSIS; QUARTZ;

STEAM;

EID: 78650141614     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614171     Document Type: Conference Paper

References (15)

1. 2 Interface Parameters and their Impact on Device Performance", Prog. Photovolt: Res. Appl. 2, 1994, pp. 265-273.
2. M. J. Kerr and A. Cuevas, "Very Low Bulk and Surface Recombination in Oxidised Silicon Wafers", Semicond. Sci. Technol. 17, 2002, pp. 35-38.
3. B. E. Deal and A. S. Grove, "General Relationship for the Thermal Oxidation of Silicon", J. Appl. Phys. 36, 1965, pp. 3770-3778.
4. P. B. Moynagh and P. J. Rosser, "Thermal Oxidation of Si", in Properties of Silicon (INSPEC, The Institution of Electrical Engineers, 1987), pp. 469-479.
5. E. H. Nicollian and J. R. Brews, MOS Physics and Technology. (Wiley, New York, 1982).
6. S. M. Hu, "Effect of Process Parameters on Stress Development in Two-Dimensional Oxidation", J. Appl. Phys. 64, 1988, pp. 323-330.
7. 2 System", in Material Science Monographs (Elsevier Science Publishers BV, Amsterdam, 1988), pp. 356.
8. J. Spiegelman and R. D. Blethen, "Method of Producing High Purity Steam", USA, Patent No. PCT/US2006/035790, 2006.
9. S. Kontermann et al., "Optimizing Annealing Steps for Crystalline Silicon Solar Cells with Screen Printed Front Side Metallization and an Oxide-Passivated Rear Surface with Local Contacts", Prog. Photovolt: Res. Appl. 17, 2009, pp. 554-566.
10. J. Benick et al., "Passivation Quality of Wet Oxides Grown From Purified Steam", Proceedings of the 24th European Photo voltaic Solar Energy Conference, 2009, pp. 1055-1058.
11. S. Mack et al., "Control and Optimization of the Thermal Processes for Industrial Solar Cell Fabrication ", Proceedings of the 34th IEEE Photovoltaic Specialists Conference, 2009, pp. 1024-1028.
12. A.B. Sproul, "Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors", Journal of Applied Physics 76, 1994, pp. 2851-2854.
13. M. J. Kerr and A. Cuevas, "General Parameterization of Auger Recombination in Crystalline Silicon", J. Appl. Phys. 91, 2002, pp. 2473-2480.
14. E. Schneiderlochner et al., "Laser-Fired Rear Contacts for Crystalline Silicon Solar Cells", Prog. Photovolt: Res. Appl. 10, 2002, pp. 29-34.
15. O. Schultz et al., "Thermal Oxidation for Crystalline Silicon Solar Cells Exceeding 19% Efficiency Applying Industrially Feasible Process Technology", Prog. Photovolt: Res. Appl. 16, 2008, pp. 317 - 324.