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Volumn 14, Issue 8, 2011, Pages

Fabrication of transparent TiO2-x channel-based thin film transistors using an oxygen-deficient TiO2-x target

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS TIO; CHANNEL LAYERS; COST-EFFICIENT; DIRECT-CURRENT MAGNETRON SPUTTERING; FREE OXIDES; GALLIUM OXIDES; INDIUM-FREE; NITROGEN AMBIENT; OXIDATION STATE; TIO;

EID: 79959250914     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3589983     Document Type: Article
Times cited : (24)

References (14)
  • 1
    • 0038362743 scopus 로고    scopus 로고
    • Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
    • DOI 10.1126/science.1083212
    • K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hideo, Science, 300, 1269 (2003). 10.1126/science.1083212 (Pubitemid 36621429)
    • (2003) Science , vol.300 , Issue.5623 , pp. 1269-1272
    • Nomura, K.1    Ohta, H.2    Ueda, K.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 2
    • 9744248669 scopus 로고    scopus 로고
    • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    • DOI 10.1038/nature03090
    • K. Normura, H. Ohra, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London), 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
    • (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 5
    • 19944382499 scopus 로고    scopus 로고
    • Use of ferroelectric gate insulator for thin film transistors with ITO channel
    • DOI 10.1016/j.mee.2005.04.017, PII S0167931705001553, 14th Biennial Conference on Insulating Films on Semiconductors
    • E. Tokumitsu, M. Senoo, and T. Miyasako, Microelectron. Eng., 80, 305 (2005). 10.1016/j.mee.2005.04.017 (Pubitemid 40753100)
    • (2005) Microelectronic Engineering , vol.80 , Issue.SUPPL. , pp. 305-308
    • Tokumitsu, E.1    Senoo, M.2    Miyasako, T.3
  • 10
    • 0021455295 scopus 로고
    • Characteristics of amorphous silicon staggered-electrode thin-film transistors
    • DOI 10.1063/1.95158
    • M. J. Powell and J. W. Orton, Appl. Phys. Lett., 45, 171 (1984). 10.1063/1.95158 (Pubitemid 14606214)
    • (1984) Applied Physics Letters , vol.45 , Issue.2 , pp. 171-173
    • Powell, M.J.1    Orton, J.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.