SCOPUS 정보 검색 플랫폼

Electrochemical and Solid-State Letters

Volumn 13, Issue 12, 2010, Pages

Effects on annealing temperature for solution-processed IZTO TFTs by nitrogen incorporation

(5) Kim, Bong Jin a Kim, Hyung Jun a Yoon, Tae Sik a Kim, Yong Sang a Lee, Hyun Ho a

a Myong Ji University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; NITROGEN INCORPORATION; NITROGEN-DOPED; ON/OFF RATIO; PRECURSOR SOLUTIONS; SOLUTION-PROCESSED; TIN CHLORIDES; ZINC TIN OXIDE;

ANNEALING; CHLORINE COMPOUNDS; ELECTRIC PROPERTIES; INDIUM; THIN FILM TRANSISTORS; TIN; TIN OXIDES; TITANIUM COMPOUNDS; ZINC;

NITROGEN;

EID: 77958501520 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3489530 Document Type: Article

Times cited : (18)

References (15)

1
- 9744248669
- Roomerature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) NATUAS 0028-0836, 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 33745435681
- Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
- DOI 10.1016/j.jnoncrysol.2006.01.073, PII S0022309306002936
- H. Hosono, J. Non-Cryst. Solids JNCSBJ 0022-3093, 352, 851 (2006). 10.1016/j.jnoncrysol.2006.01.073 (Pubitemid 43949008)
- (2006) Journal of Non-Crystalline Solids , vol.352 , Issue.SPEC. ISS. , pp. 851-858
- Hosono, H.¹

3
- 34250621864
- A general route to printable high-mobility transparent amorphous oxide semiconductors
- DOI 10.1002/adma.200600961
- D.-H. Lee, Y.-J. Chang, G. S. Herman, and C.-H. Chang, Adv. Mater. ADVMEW 0935-9648, 19, 843 (2007). 10.1002/adma.200600961 (Pubitemid 46932815)
- (2007) Advanced Materials , vol.19 , Issue.6 , pp. 843-847
- Lee, D.-H.¹ Chang, Y.-J.² Herman, G.S.³ Chang, C.-H.⁴

4
- 67249086653
- JMACEP 0959-9428,. 10.1039/b822893k
- D.-H. Lee, S.-Y. Han, G. S. Herman, and C.-H. Chang, J. Mater. Chem. JMACEP 0959-9428, 19, 3135 (2009). 10.1039/b822893k
- (2009) J. Mater. Chem. , vol.19 , pp. 3135
- Lee, D.-H.¹ Han, S.-Y.² Herman, G.S.³ Chang, C.-H.⁴

5
- 36148976499
- Solution-processed indium-zinc oxide transparent thin-film transistors
- DOI 10.1149/1.2800562
- C. G. Choi, S.-J. Seo, and B.-S. Bae, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 11, H7 (2008). 10.1149/1.2800562 (Pubitemid 350115965)
- (2008) Electrochemical and Solid-State Letters , vol.11 , Issue.1
- Choi, C.G.¹ Seo, S.-J.² Bae, B.-S.³

6
- 63649106046
- JPAPBE 0022-3727,. 10.1088/0022-3727/42/3/035106
- S.-J. Seo, C. G. Choi, Y. H. Hwang, and B.-S. Bae, J. Phys. D JPAPBE 0022-3727, 42, 035106 (2009). 10.1088/0022-3727/42/3/035106
- (2009) J. Phys. D , vol.42 , pp. 035106
- Seo, S.-J.¹ Choi, C.G.² Hwang, Y.H.³ Bae, B.-S.⁴

7
- 70450210385
- IJDTAL 1551-319X,. 10.1109/JDT.2009.2024330
- S.-Y. Han, D.-H. Lee, G. S. Herman, and C.-H. Chang, J. Disp. Technol. IJDTAL 1551-319X, 5, 520 (2009). 10.1109/JDT.2009.2024330
- (2009) J. Disp. Technol. , vol.5 , pp. 520
- Han, S.-Y.¹ Lee, D.-H.² Herman, G.S.³ Chang, C.-H.⁴

8
- 35649020699
- High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO
- DOI 10.1063/1.2803219
- S. J. Lim, S. Kwon, J.-S. Park, and H. Kim, Appl. Phys. Lett. APPLAB 0003-6951, 91, 183517 (2007). 10.1063/1.2803219 (Pubitemid 350037253)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183517
- Lim, S.J.¹ Kwon, S.-J.² Kim, H.³ Park, J.-S.⁴

9
- 73849118524
- JESOAN 0013-4651,. 10.1149/1.3269973
- S. J. Lim, J.-M. Kim, D. Kim, S. Kwon, J.-S. Park, and H. Kim, J. Electrochem. Soc. JESOAN 0013-4651, 157, H214 (2010). 10.1149/1.3269973
- (2010) J. Electrochem. Soc. , vol.157 , pp. 214
- Lim, S.J.¹ Kim, J.-M.² Kim, D.³ Kwon, S.⁴ Park, J.-S.⁵ Kim, H.⁶

10
- 77952997651
- APPLAB 0003-6951,. 10.1063/1.3428357
- H. Bong, W. H. Lee, D. Y. Lee, B. J. Kim, J. H. Cho, and K. Cho, Appl. Phys. Lett. APPLAB 0003-6951, 96, 192115 (2010). 10.1063/1.3428357
- (2010) Appl. Phys. Lett. , vol.96 , pp. 192115
- Bong, H.¹ Lee, W.H.² Lee, D.Y.³ Kim, B.J.⁴ Cho, J.H.⁵ Cho, K.⁶

11
- 77957869659
- JPCCCK 1932-7447. 10.1021/jp102777j
- T. Shimada, B. S. Mun, I. F. Nakai, A. Banno, H. Abe, Y. Iwasawa, T. Ohta, and H. Kondoh, J. Phys. Chem. C JPCCCK 1932-7447 (2010). 10.1021/jp102777j
- (2010) J. Phys. Chem. C
- Shimada, T.¹ Mun, B.S.² Nakai, I.F.³ Banno, A.⁴ Abe, H.⁵ Iwasawa, Y.⁶ Ohta, T.⁷ Kondoh, H.⁸

12
- 77953004199
- APPLAB 0003-6951,. 10.1063/1.3429588
- J. S. Jung, K. S. Son, K.-H. Lee, J. S. Park, T. S. Kim, J.-Y. Kwon, K.-B. Chung, J.-S. Park, B. Koo, and S. Lee, Appl. Phys. Lett. APPLAB 0003-6951, 96, 193506 (2010). 10.1063/1.3429588
- (2010) Appl. Phys. Lett. , vol.96 , pp. 193506
- Jung, J.S.¹ Son, K.S.² Lee, K.-H.³ Park, J.S.⁴ Kim, T.S.⁵ Kwon, J.-Y.⁶ Chung, K.-B.⁷ Park, J.-S.⁸ Koo, B.⁹ Lee, S.¹⁰

13
- 0037136179
- Plasma-enhanced chemical vapor deposition of silicon nitride below 250°C
- DOI 10.1016/S0042-207X(02)00134-3, PII S0042207X02001343
- Y. Kuo and H. H. Lee, Vacuum VACUAV 0042-207X, 66, 299 (2002). 10.1016/S0042-207X(02)00134-3 (Pubitemid 34862423)
- (2002) Vacuum , vol.66 , Issue.3-4 , pp. 299-303
- Kuo, Y.¹ Lee, H.H.²

14
- 84870414017
- last accessed August 2010
- NIST chemistry web book, http://webbook.nist.gov/chemistry/, last accessed August 2010.
- NIST Chemistry Web Book

15
- 0034312902
- x sensitivity of oxide thin films prepared by RF sputtering
- DOI 10.1016/S0025-5408(00)00455-4, PII S0025540800004554
- S. Tanaka and T. Esaka, Bull. Mater. Sci. BUMSDW 0250-4707, 35, 2491 (2000). 10.1016/S0025-5408(00)00455-4 (Pubitemid 32272228)
- (2000) Materials Research Bulletin , vol.35 , Issue.14-15 , pp. 2491-2502
- Tanaka, S.¹ Esaka, T.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.