Improved electrical characteristics of amorphous oxide TFTs based on TiOχ channel layer grown by low-temperature MOCVD

IEEE Electron Device Letters

Volumn 29, Issue 12, 2008, Pages 1319-1321

  Park, Jae Woo ^a   Han, Sung Won ^b   Jeon, Namho ^a   Jang, Jinhyuk ^a   Yoo, Seunghyup ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Techno Semichem Co Ltd   (South Korea)

Author keywords

Metal organic chemical vapor deposition (MOCVD); Thin film transistor (TFT); Titanium oxide TiO ; Transparent TFTs

Indexed keywords

ELECTROMAGNETIC WAVES; INDUSTRIAL CHEMICALS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; TITANIUM; TITANIUM OXIDES; VAPORS; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS OXIDES; CARRIER DENSITIES; CHAMBER TEMPERATURES; CHANNEL LAYERS; CHANNEL LENGTHS; ELECTRICAL CHARACTERISTICS; GATE BIASES; HYSTERESIS WINDOWS; ORGANIC CHEMICAL VAPOR DEPOSITIONS; SUBTHRESHOLD SWINGS; THIN-FILM TRANSISTOR (TFT); TRANSMISSION LINE MODELS; TRANSPARENT TFTS;

THIN FILM TRANSISTORS;

EID: 57049090509     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2005737     Document Type: Article

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