Performance improvement of N-type TiOχ active-channel TFTs grown by low-temperature plasma-enhanced ALD

IEEE Electron Device Letters

Volumn 30, Issue 7, 2009, Pages 739-741

  Park, Jae Woo ^a   Lee, Dongyun ^a   Kwon, Hakyoung ^b   Yoo, Seunghyup ^a   Huh, Jongmoo ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b ASM GK Ltd   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Plasma enhanced atomic layer deposition (PEALD); Thin film transistor (TFT); Titanium oxide (TiOx)

Indexed keywords

ACTIVE CHANNELS; ACTIVE-MATRIX DISPLAYS; AS-GROWN; BACKPLANE TECHNOLOGY; LOW TEMPERATURE PLASMAS; ON-OFF RATIO; PERFORMANCE BALANCE; PERFORMANCE IMPROVEMENTS; PLASMA TREATMENT; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION (PEALD); RADIOFREQUENCY IDENTIFICATION TAGS; SATURATION MOBILITY; THIN-FILM TRANSISTOR (TFT); TIO;

ATOMIC LAYER DEPOSITION; ATOMS; DISPLAY DEVICES; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TITANIUM; TITANIUM OXIDES; TRANSISTORS;

PLASMA DEPOSITION;

EID: 67650455887     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2021587     Document Type: Article

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