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note
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s = 3.69 ns). Thus, one reason why 1 is more resistant to photooxidation than 2 and 3 may be a consequence of a shorter excited state lifetime of 1 relative to those of 2 and 3.
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Elemental Radii
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67
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The TFT devices were fabricated in yellow light and were measured in the dark. The devices measured two structures (bottom electrode contact and top electrode contact). These values were the average of more than three samples
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The TFT devices were fabricated in yellow light and were measured in the dark. The devices measured two structures (bottom electrode contact and top electrode contact). These values were the average of more than three samples.
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69
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79958824847
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