High performance n- and p-type field-effect transistors based on tetrathiafulvalene derivatives

Journal of the American Chemical Society

Volumn 128, Issue 30, 2006, Pages 9598-9599

  Naraso, ^a   Nishida, Jun Ichi ^a   Kumaki, Daisuke ^a   Tokito, Shizuo ^b   Yamashita, Yoshiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD; HALOGEN; PHOSPHITE; QUINOXALINE; TETRATHIAFULVALENE DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; CRYSTAL; DEVICE; DIFFERENTIAL PULSE VOLTAMMETRY; ELECTRODE; ELECTRON TRANSPORT; FILM; ORGANIC FIELD EFFECT TRANSISTOR; OXIDATION REDUCTION POTENTIAL; REACTION ANALYSIS; SEMICONDUCTOR; STRUCTURE ANALYSIS; SYNTHESIS; X RAY CRYSTALLOGRAPHY; X RAY DIFFRACTION;

EID: 33746650124     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja0630083     Document Type: Article

References (24)

1. (a) Katz, H. E.; Bao, Z.; Gilat, S. L. Acc. Chem. Res. 2001, 34, 359.
2. (b) Facchetti, A.; Yoon, M.-H.; Stern, C. L.; Katz, H. E.; Marks, T. J. Angew. Chem., Int. Ed. 2003, 42, 3900.
3. (c) Dimitrakopoulos, C. D.; Malenfant, P. R. L. Adv. Mater. 2002, 14, 99.
4. (d) Moon, H.; Zeis, R.; Borkent, E. J.; Besnard, C.; Lovinger, A. J.; Siegrist, T.; Kloc, C.; Bao, Z. J. Am. Chem. Soc. 2004, 126, 15322.
5. (a) Facchetti, A.; Mushrush, M.; Katz, H. E.; Marks, T. J. Adv. Mater. 2003, 15, 33.
6. (b) Facchetti, A.; Letizia, J.; Yoon, M.-H.; Mushrush, M.; Katz, H. E.; Marks, T. J. Chem. Mater. 2004, 16, 4715.
7. (c) Takimiya, K.; Kunugi, Y.; Konda, Y.; Ebata, H.; Toyoshima, Y.; Otsubo, T. J. Am. Chem. Soc. 2006, 128, 3044.
8. (a) Afzali, A.; Dimitrakopoulos, C. D.; Breen, T. L. J. Am. Chem. Soc. 2002, 124, 8812.
9. (b) Payne, M. M.; Parkin, S. R.; Anthony, J. E.; Kuo, C.-C.; Jackson, T. N. J. Am. Chem. Soc. 2005, 127, 4986.
10. (c) Tulevski, G. S.; Miao, Q.; Afzali, A.; Graham, T. O.; Kagan, C. R.; Nuckolls, C. J. Am. Chem. Soc. 2006, 128, 1788.
11. (a) Mas-Torrent, M.; Durkut, M.; Hadley, P.; Ribas, X.; Rovira, C. J. Am. Chem. Soc. 2004, 126, 984.
12. (b) Mas-Torrent, M.; Hadley, P.; Bromley, S. T.; Crivillers, N.; Veciana, J.; Rovira, C. Appl. Phys. Lett. 2005, 86, 012110.
13. (a) Noda, B.; Katsuhara, M.; Aoyagi, I.; Mori, T.; Taguchi, T.; Kambayashi, T.; Ishikawa, K.; Takezoe, H. Chem. Lett. 2005, 34, 392.
14. (b) Katsuhara, M.; Aoyagi, I.; Nakajima, H.; Mori, T.; Kambayashi, T.; Ofuji, M.; Takanishi, Y.; Ishikawa, K.; Takezoe, H.; Hosono, H. Synth. Met. 2005, 149, 219.
15. Naraso; Nishida, J.; Ando, S.; Yamaguchi, J.; Itaka, K.; Koinuma, H.; Tada, H.; Tokito, S.; Yamashita, Y. J. Am. Chem. Soc. 2005, 127, 10142.
16. (a) Mushrush, M.; Facchetti, A.; Lefenfeld, M.; Katz, H. E.; Marks, T. J. J. Am. Chem. Soc. 2003, 125, 9414.
17. (b) Klauk, H.; Halik, M.; Zschieschang, U.; Eder, F.; Schmid, G.; Dehm, C. Appl. Phys. Lett. 2003, 82, 4175.
18. (c) Katz, H. E.; Hong, X. M.; Dodabalapur, A.; Sarpeshkar, R. J. Appl. Phys. 2002, 91, 1572.
19. (a) Sakamoto, Y.; Suzuki, T.; Kobayashi, M.; Gao, Y.; Fukai, Y.; Inoue, Y.; Sato, F.; Tokito, S. J. Am. Chem. Soc. 2004, 126, 8138.
20. (b) Yoon, M.-H.; DiBenedetto, S. A.; Facchetti, A.; Marks, T. J. J. Am. Chem. Soc. 2005, 127, 1348.
21. Newman, C. R.; Frisbie, C. D.; da Silva Filho, D. A.; Brédas, J.-L.; Ewbank, P. C.; Mann, K. R. Chem. Mater. 2004, 16, 4436.
22. (a) Facchetti, A.; Deng, Y.; Wang, A.; Koide, Y.; Sirringhaus, H.; Marks, T. J.; Friend, R. H. Angew. Chem., Int. Ed. 2000, 39, 4547.
23. (b) Letizia, J. A.; Facchetti, A.; Stern, C. L.; Ratner, M. A.; Marks, T. J. J. Am. Chem. Soc. 2005, 127, 13476.
24. (c) Ando, S.; Murakami, R.; Nishida, J.; Tada, H.; Inoue, Y.; Tokito, S.; Yamashita, Y. J. Am. Chem. Soc. 2005, 127, 14996.