Fin field effect transistors performance in analog and RF for high-k dielectrics

Defence Science Journal

Volumn 61, Issue 3, 2011, Pages 235-240

  Nirmal, D ^a   Vijaya Kumar, P ^b  

^a KARUNYA UNIVERSITY   (India)

^b KARPAGAM COLLEGE OF ENGINEERING   (India)

Author keywords

CMOS; FinFET; High performance semiconductor devices; High k gate dielectrics; Multi gate devices; Nanoscale

Indexed keywords

CMOS INTEGRATED CIRCUITS; ECONOMIC AND SOCIAL EFFECTS; ELECTRONIC DESIGN AUTOMATION; FINFET; FINS (HEAT EXCHANGE); HIGH-K DIELECTRIC; LEAKAGE CURRENTS; LOW-K DIELECTRIC; MOS DEVICES; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; THRESHOLD VOLTAGE; ZIRCONIA;

CMOS; FIN FIELD-EFFECT TRANSISTORS; HIGH PERFORMANCE SEMICONDUCTOR DEVICE; HIGH- K; HIGH-K GATE DIELECTRICS; HIGH-PERFORMANCE SEMICONDUCTORS; MULTIGATE DEVICES; NANO SCALE; TRANSISTOR PERFORMANCE;

GATE DIELECTRICS;

EID: 79958762382     PISSN: 0011748X     EISSN: None     Source Type: Journal    
DOI: 10.14429/dsj.61.695     Document Type: Article

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