Nanosized high κ dielectric material for FINFET

Integrated Ferroelectrics

Volumn 121, Issue 1, 2010, Pages 31-35

  Nirmal, D ^a   Nalini, B ^a   Vijayakumar, P ^b  

^a KARUNYA UNIVERSITY   (India)

^b KARPAGAM COLLEGE OF ENGINEERING   (India)

Author keywords

CMOS scaling; FinFET; High ; ITRS; Nanoparticle

Indexed keywords

CERAMIC MATERIALS; INTEGRATED CIRCUITS; NANOPARTICLES; PERMITTIVITY; SILICON COMPOUNDS; X RAY DIFFRACTION; ZIRCONIUM; ZIRCONIUM ALLOYS;

CMOS SCALING; DIELECTRIC CONSTANTS; FINFET; GATE MATERIALS; HIGH DIELECTRIC CONSTANTS; IMPEDANCE ANALYSIS; ITRS; NANO SCALE; NANO-SCALING; NANO-SIZED; NANOSCALED; OXIDE THICKNESS; ROOM TEMPERATURE; SEM; STRUCTURAL CHARACTERIZATION; WET-CHEMICAL METHOD; ZIRCONIUM DIOXIDE;

DIELECTRIC MATERIALS;

EID: 78650884002     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584587.2010.492014     Document Type: Article

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