Annealing temperature effect on the Cu-Cu bonding energy for 3D-IC integration

Metals and Materials International

Volumn 17, Issue 1, 2011, Pages 105-109

  Jang, Eun Jung ^a   Kim, Jae Won ^a   Kim, Bioh ^b   Matthias, Thorsten ^b   Park, Young Bae ^a  

^a Andong National University   (South Korea)

^b EV Group   (United States)

Author keywords

Diffusion bonding; Focus ion beam (FIB); Metals; Toughness; Transmission electron microscopy (TEM)

Indexed keywords

ADHESIVES; ANNEALING; BINARY ALLOYS; DIFFUSION BONDING; FOCUSED ION BEAMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLIC FILMS; METALS; SILICON WAFERS; TEMPERATURE; TIMING CIRCUITS; TOUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ADHESIVE ENERGY; ANNEALING TEMPERATURE EFFECTS; BONDING PROCESS; BONDING TEMPERATURES; FOCUS ION BEAM; INTERFACIAL LAYER; LOW TEMPERATURES; THREE DIMENSIONAL INTEGRATION;

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 79958718331     PISSN: 15989623     EISSN: 20054149     Source Type: Journal    
DOI: 10.1007/s12540-011-0214-0     Document Type: Article

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