Investigations of strength of copper-bonded wafers with several quantitative and qualitative tests

Journal of Electronic Materials

Volumn 35, Issue 5, 2006, Pages 1082-1086

  Chen, K N ^a,c   Chang, S M ^b   Shen, L C ^b   Reif, R ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Bond strength; Copper; Wafer bonding

Indexed keywords

ANNEALING; BONDING; CHEMICAL BONDS; COPPER; THERMAL EFFECTS;

BOND STRENGTH; QUALITATIVE TESTS; WAFER BONDING;

SILICON WAFERS;

EID: 33745041525     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02692570     Document Type: Conference Paper

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