Effect of aluminium doping on structural and optoelectronic properties of sol-gel derived nanocrystalline ZnO thin film

Science of Advanced Materials

Volumn 3, Issue 2, 2011, Pages 276-283

  Chakravarty, Runa ^a   Periasamy, C ^a  

^a BANARAS HINDU UNIVERSITY   (India)

Author keywords

Al doped ZnO films; Optical bandgap; Sol gel technique; Surface morphology; ZnO thin film

Indexed keywords

EID: 79958275951     PISSN: 19472935     EISSN: 19472943     Source Type: Journal    
DOI: 10.1166/sam.2011.1154     Document Type: Article

References (35)

1. P. L. Chen, X. Y. Ma, D. S. Li, Y. Y. Zhang, and D. R. Yang, Appl. Phys. Lett. 94 (2009), 061110.
2. H. Wang, J. W. Xu, M. F. Ren, and L. Yang, J. Mater. Sci.: Mater. Electron. 19 (2008), 1135.
3. P. P. Sahay and R. K. Nath, Sens. Actuators, B 133 (2008), 222.
4. G. Zhu, R. Yang, S. Wang, and Z. L. Wang, Nano Lett. 10 (2010), 3151.
5. C. G. Van De Walle, Phys. Rev. Lett. 85 (2000), 1012.
6. J. S. Bhat, A. S. Patil, N. Swami, B. G. Mulimani, B. R. Gayathri, N. G. Deshpande, G. H. Kim, M. S. Seo, and Y. P. Lee, J. Appl. Phys. 10 (2010), 043513.
7. K. M. Lin and P. Tsai, Thin Solid Films 515 (2007), 8601.
8. X. Chen, W. Guan, G. Fang, and X. Z. Zhao, Appl. Surf. Sci. 252 (2005), 1561.
9. V. Vaithianathan, B. T. Lee, and S. S. Kim, Appl. Phys. Lett. 86 (2005), 062101.
10. N. Saito, H. Haneda, T. Sekiguchi, N. Ohashi, I. Sakaguchi, and K. Koumoto, Adv. Mater. 14 (2002), 418.
11. M. Shahjahan, M. K. R. Khan, M. F. Hossain, S. Biswas, and T. Takahashi, J. Vac. Sci. Technol. A 27 (2009), 885.
12. R. J. Hong, X. Jiang, B. Szyszka, V. Sittinger, and A. Pflug, Appl. Surf. Sci. 207 (2003), 341.
13. L. P. Schuler, N. Valanoor, P. Miller, I. Guy, R. J. Reeves, and M. M. Alkaisi, J. Electron. Mater. 36 (2007), 507.
14. R. K. Shukla, A. Srivastava, A. Srivastava, and K. C. Dubey, J. Cryst. Growth 294 (2006), 427.
15. P. Nunes, E. Fortunadeo, and R. Martins, Thin Solid Films 383 (2001), 277.
16. X. Jiang, F. L. Wong, M. K. Fung, and S. T. Lee, Appl. Phys. Lett. 83 (2003), 1875.
17. C. Periasamy and P. Chakrabarti, J. Vacc. Sci. Technol. B 27 (2009), 2124.
18. A. Lidia Armelao, F. Monica Fabrizio, G. Stefano Gialanella, and Z. Fiorenzo Zordan, Thin Solid Films 394 (2001), 90.
19. T. Ohshima, R. K. Thareja, T. Ikegami, and K. Ebihara, Surf. Coat. Technol. 169 (2003), 517.
20. S. Fujihara, A. Suzuki, and T. Kimura, J. Appl. Phys. 94 (2003), 2411.
21. C. Periasamy and P. Chakrabarti, J. Electron. Mate. 40 (2010), 259.
22. R. Das and S. Ray, Indian J. Phys. 78 (2004), 901.
23. X. W. Wang, Z. C. Wu, J. F. Webb, and Z. G. Liu, Appl. Phys. A 77 (2003), 561.
24. C. Periasamy, R. Prakash, and P. Chakrabarti, J. Mater. Sci: Mater Electron. 21 (2010), 309.
25. C. Periasamy and P. Chakrabarti, J. Nanoelectron. Optoelectron. 5 (2010), 38.
26. C. Periasamy and P. Chakrabarti, Sci. Adv. Mater. 3 (2011), 73.
27. H. Kim, J. S. Horwitz, S. B. Qadri, and D. B. Chrisey, Thin Solid Films 420(2002), 107
28. H. Ko, W. P. Tai, K. C. Kim, S. H. Kim, S. J. Suh, and Y. S. Kim, J. Crystal Growth 277 (2005), 352.
29. N. Serpone, D. Lawless, and R. Khairutdinov, J. Phys. Chem. 99 (1995), 16646.
30. M. Wang, K. E. Lee, S. H. Hahn, E. J. Kim, S. Kim, J. S. Chung, E. W. Shin, and C. Park, Mater. Lett. 61 (2007), 1118.
31. E. Burstein, Phys. Rev. 93 (1954), 632.
32. T. S. Moss, Proc. Phys. Soc. London Sect. B 67 (1954), 775.
33. C. H. Hsu and D. H. Chen, Nanotechnology 21 (2010), 285603.
34. D. Song, Appl. Surface Sci. 254 (2008), 4171.
35. H. Gómez, A. Maldonado, R. Castanedo-Pérez, G. Torres-Delgado, and M. L. Olver, Mater. Charact. 58 (2007), 708.