Structural, optical, and photocatalytic properties of ZnO: Al nanowall structure deposited on glass substrate by spray pyrolysis

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 4, 2009, Pages 885-888

  Shahjahan, M ^a   Khan, M K R ^b   Hossain, M F ^a   Biswas, S ^a   Takahashi, T ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

^b UNIVERSITY OF RAJSHAHI   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; AL-DOPING; BAND GAPS; CRYSTALLINITY; GLASS SUBSTRATES; LOW COSTS; LOW DEPOSITION TEMPERATURE; NANOWALL; PHOTO-CATALYTIC; PHOTOCATALYTIC ACTIVITIES; PHOTOCATALYTIC DECOMPOSITION; PHOTOCATALYTIC PROPERTY; POLYCRYSTALLINE; SPRAY-PYROLYSIS TECHNIQUES; STRUCTURAL STUDIES; SURFACE STUDY; TRANSMISSION SPECTRUMS; UV-VISIBLE; ZNO; ZNO NANOSTRUCTURES; ZNO NANOWALLS;

ALUMINUM; DOPING (ADDITIVES); ENERGY GAP; FABRICATION; GLASS; METHANOL; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOCATALYSIS; SEMICONDUCTING ZINC COMPOUNDS; SURFACE TREATMENT; ZINC OXIDE;

SPRAY PYROLYSIS;

EID: 67650293601     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3093878     Document Type: Article

References (30)

1. R. D. Vispute, Appl. Phys. Lett. 73, 348 (1998).
2. J. Narayanan, K. Dovidenko, A. K. Sharma, and S. Oktyabrsky, J. Appl. Phys. 84, 2597 (1998).
3. Z. F. Liu, F. K. Shan, Y. X. Li, B. C. Shin, and Y. S. Yu, J. Cryst. Growth 259, 130 (2003).
4. M. Dinescu and P. Verardi, Appl. Surf. Sci. 106, 149 (1996).
5. L. C. Nistor, C. Ghica, D. Matei, G. Dinescu, M. Dinescu, and G. Van, J. Cryst. Growth 277, 26 (2005).
6. J. Nishi, Jpn. J. Appl. Phys., Part 2 42, L347 (2003).
7. N. Shibata, T. Uemura, H. Yamaguchi, and T. Yasukawa, Phys. Status Solidi A 200, 58 (2003).
8. B. Wacogne, M. P. Roe, T. J. Pattinson, and C. N. Pannell, Appl. Phys. Lett. 67, 1674 (1995).
9. M. S. Park and B. I. Min, Phys. Rev. B 68, 224436 (2003).
10. Q. Wan, C. L. Lin, X. B. Yu, and T. H. Wang, Appl. Phys. Lett. 84, 124 (2004).
11. J. B. Baxter and E. S. Aydil, Appl. Phys. Lett. 86, 053114 (2005).
12. Z. Fan and J. G. Lu, Appl. Phys. Lett. 86, 123510 (2005).
13. Z. Fan, D. Wang, P. Chang, W. Tseng, and J. G. Lu, Appl. Phys. Lett. 85, 5923 (2004).
14. A. V. Sing, R. M. Mehra, A. Wakahara, and A. Yoshida, J. Appl. Phys. 93, 396 (2003).
15. Y. W. Heo, D. P. Norton, and S. Pearton, J. Appl. Phys. 98, 073502 (2006).
16. X. W. Sun and H. S. Kwok, J. Appl. Phys. 86, 408 (1999).
17. S. T. Tan, B. J. Chen, X. W. Sun, W. J. Fan, H. S. Kwok, X. H. Zhang, and S. J. Chua, J. Appl. Phys. 98, 013505 (2005).
18. J. H. Park, S. J. Jang, S. S. Kim, and B. T. Lee, Appl. Phys. Lett. 89, 121108 (2006).
19. S. Bandyopadhyay, G. K. Paul, and S. K. Sen, Sol. Energy Mater. Sol. Cells 71, 103 (2002).
20. M. Krunks and E. Mellikov, Thin Solid Films 270, 33 (1995).
21. Y. J. Xiang, Appl. Phys. Lett. 83, 1689 (2003).
22. M. H. Huang, Y. Wu. H. Feick, N. Tran, E. Weber, and P. Yang, Adv. Mater. (Weinheim, Ger.) 13, 113 (2001).
23. H. T. Ng, J. Li, M. K. Smith, P. Nguyen, A. Cassell, J. Han, and M. Meyyappan, Science 300, 1249 (2003).
24. J. Lao, J. Y. Huang, D. Z. Wang, Z. F. Ren, D. Steeves, B. Kimball, and W. Porter, Appl. Phys. A: Mater. Sci. Process. 78, 539 (2004).
25. M. Gabas, S. Gota, N. T. Barrett, J. Avila, and M. Sacchi, Appl. Phys. Lett. 86, 042104 (2005).
26. M. J. Alam and D. C. Cameron, J. Sol-Gel Sci. Technol. 25, 137 (2002).
27. D. Goyal, P. Solanki, B. Marathe, M. Takwale, and V. Bhide, Jpn. J. Appl. Phys., Part 1 31, 361 (1992).
28. D. Cossement and J. M. Strey dio, J. Cryst. Growth 57, L7 (1985).
29. T. Takahashi, K. Prabakar, T. Nezuka, T. Yamazaki, T. Nakashima, Y. Kubota, and A. Fujishima, J. Vac. Sci. Technol. A 24, 1161 (2006).
30. M. Manzoli, A. Chiorino, and F. Boccuzi, Appl. Catal., B 57, 201 (2004).