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Volumn 519, Issue 19, 2011, Pages 6354-6361

Mitigating the geometrical limitations of conventional sputtering by controlling the ion-to-neutral ratio during high power pulsed magnetron sputtering

Author keywords

Chromium; High power impulse magnetron sputtering; High power pulsed magnetron sputtering; Ionized physical vapor deposition

Indexed keywords

BIAXIAL ALIGNMENT; CHROMIUM LAYER; CONVENTIONAL SPUTTERING; FIBER TEXTURE; FLUX RATIO; HIGH POWER PULSED MAGNETRON SPUTTERING; HIGH-POWER; HIGHLY-IONIZED; IN-PLANE ALIGNMENT; INCLINATION ANGLES; ION CONTENT; IONIZED PHYSICAL VAPOR DEPOSITION; LINE-OF-SIGHT DEPOSITION; MATERIAL FLUXES; RECTANGULAR SHAPES; SPUTTERED SPECIES; SUBSTRATE ORIENTATION;

EID: 79958236524     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.031     Document Type: Article
Times cited : (53)

References (23)
  • 12
    • 79958226418 scopus 로고    scopus 로고
    • accessedinOctober2010
    • http://www.cemecon.de/coating-technology/2-coating--units/ 25-cc-800sup-sup-9-hipims/index-eng.html, accessed in October 2010.
  • 13
    • 79958236322 scopus 로고    scopus 로고
    • The reference measurements performed in the DCMS mode indicated that as long as the ion-to-neutral ratio and the substrate bias is kept constant, similar film texture (and column tilt) is achieved, quite independently of the flux incident on the substrate (within the experimental limits tested)
    • The reference measurements performed in the DCMS mode indicated that as long as the ion-to-neutral ratio and the substrate bias is kept constant, similar film texture (and column tilt) is achieved, quite independently of the flux incident on the substrate (within the experimental limits tested).
  • 21
    • 79958231497 scopus 로고    scopus 로고
    • Since very little is known about the basic parameters that determine the sheath widths in the case of HIPIMS discharges one can only use arguments from the classical processing discharges. At 3 mTorr (process pressure used in our experiment) the mean free path for ion collisions with Ar molecules is ∼ 1.6 cm, i.e., somewhat larger than the sheath width in the case of high substrate bias (Child law sheath is typically less than 1 cm) and lot larger than the sheath width for floating substrate (less than 1 mm). Within this simplified classical treatment sheaths can thus be treated as colissionless
    • Since very little is known about the basic parameters that determine the sheath widths in the case of HIPIMS discharges one can only use arguments from the classical processing discharges. At 3 mTorr (process pressure used in our experiment) the mean free path for ion collisions with Ar molecules is ∼ 1.6 cm, i.e., somewhat larger than the sheath width in the case of high substrate bias (Child law sheath is typically less than 1 cm) and lot larger than the sheath width for floating substrate (less than 1 mm). Within this simplified classical treatment sheaths can thus be treated as colissionless.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.