Initial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al2O3 and AlN

Thin Solid Films

Volumn 519, Issue 18, 2011, Pages 6000-6003

  Xu, Yan ^a   Chen, Lin ^a   Sun, Qing Qing ^a   Wang, Peng Fei ^a   Ding, Shi Jin ^a   Zhang, David Wei ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Alumina; Aluminium nitride; Atomic layer deposition; First principle calculation; Surface passivation

Indexed keywords

ALN; ATOMIC SCALE; ENERGY LEVEL; FIRST-PRINCIPLE CALCULATION; FIRST-PRINCIPLES CALCULATION; GE SURFACES; GE(100); HALF REACTIONS; PASSIVATION LAYER; PASSIVATION PROCESS; REACTION BARRIER HEIGHTS; REACTION MECHANISM; REACTION PATHWAYS; SURFACE PASSIVATION;

ALUMINUM; ALUMINUM COMPOUNDS; ATOMIC LAYER DEPOSITION; ATOMS; CALCULATIONS; CHEMISORPTION; GERMANIUM; NITRIDES;

PASSIVATION;

EID: 79958084496     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.03.127     Document Type: Article

References (28)

1. D.A. Buchanan IBM J. Res. Dev. 43 1999 245
2. G.D. Wilk, and R.M. Wallace Appl. Phys. Lett. 74 1999 2854
3. P.A. Packan Science 285 1999 2079
4. Y. Kamata Mater. Today 11 2008 30
5. M.M. Frank, S.J. Koester, M. Copel, J.A. Ott, V.K. Paruchuri, H. Shang, and R. Loesing Appl. Phys. Lett. 89 2006 112905
6. W.P. Bai, N. Lu, and D.-L. Kwong IEEE Electron Device Lett. 26 2005 378
7. N. Wu, Q. Zhang, C. Zhu, D.S.H. Chan, A. Du, N. Balasubramanian, M.F. Li, A. Chin, and J.K.O. Sin IEEE Electron Device Lett. 25 2004 631
8. F. Gao, S.J. Lee, J.S. Pan, L.J. Tang, and D.-L. Kwong Appl. Phys. Lett. 86 2005 113501
9. W.P. Bai, N. Lu, A.P. Ritenour, M.L. Lee, D.A. Antoniadis, and D.-L. Kwong IEEE Trans. Electron Devices 53 2006 2551
10. C.-C. Cheng, C.-H. Chien, G.-L. Luo, C.-H. Yang, M.-L. Kuo, J.-H. Lin, C.-K. Tseng, and C.-Y. Chang J. Electrochem. Soc. 154 2007 G155
11. S.J. Whang, S.J. Lee, F. Gao, N. Wu, C.X. Zhu, J.S. Pan, L.J. Tang, and D.-L. Kwong International Electron Devices Meeting Technical Digest, San Francisco CA, USA 2004 307
12. C.C. Cheng, C.H. Chien, G.L. Luo, J.C. Liu, C.C. Kei CC, D.R. Liu, C.N. Hsiao, C.H. Yang, and C.Y. Changa J. Electrochem. Soc. 155 2008 G203
13. K.H. Kim, R.G. Gordon, A. Ritenour, and D.A. Antoniadis Appl. Phys. Lett. 90 2007 212104
14. C.O. Chui, F. Ito, and K.C. Saraswat IEEE Electron Device Lett. 25 2004 613
15. C.O. Chui, H. Kim, P. McIntyre, and K.C. Saraswat IEEE Electron Device Lett. 25 2004 274
16. W.P. Bai, N. Lu, J. Liu, A. Ramirez, D.L. Kwong, D. Wristers, A. Ritenour, S. Yu, L. Lee, and D.A. Antoniadis Proceedings of the Symposiums on VLSI Technology, Kyoto, Japan 2003 121
17. H. Shang, M.M. Frank, E.P. Gusev, J.O. Chu, S.W. Bedell, K.W. Guarini, and M. Ieong IBM J. Res. Dev. 50 2006 377
18. K.J. Hubbard, and D.G. Schlom J. Mater. Res. 11 1996 2757
19. S. Jakschik, and U. Schroeder Thin Solid Films 425 2003 216
20. A. Delabie, D.P. Brunco, T. Conard, P. Favia, H. Bender, A. Franquet, S. Sioncke, W. Vandervorst, S. Van Elshocht, M. Heyns, M. Meuris, E. Kim, P.C. McIntyre, K.C. Saraswat, J.M. LeBeau, J. Cagnon, S. Stemmer, and W. Tsai J. Electrochem. Soc. 155 2008 H937
21. M. Caymax, S. Van Elshocht, M. Houssa, A. Delabie, T. Conard, M. Meuris, M.M. Heyns, A. Dimoulas, S. Spiga, M. Fanciulli, J.W. Seo, and L.V. Concharova Mater. Sci. Eng. B 135 2006 256
22. M. Meuris, A. Delabie, S. Van Elshocht, S. Kubicek, P. Verheyen, B. De Jaeger, J. Van Steenbergen, G. Winderickx, E. Van Moorhem, R.L. Puurunen, B. Brijs, M. Caymax, T. Conard, O. Richard, W. Vandervorst, C. Zhao, S. De Gendt, T. Schram, T. Chiarella, B. Onsia, I. Teerlinck, M. Houssa, P.W. Mertens, G. Raskin, P. Mijlemans, S. Biesemans, and M.M. Heyns Mater. Sci. Semicond. Process. 8 2005 203
23. M. Caymax, M. Houssa, G. Pourtois, F. Bellenger, K. Martens, A. Delabie, and S. Van Elshocht Appl. Surf. Sci 254 2008 6094
24. M.J. Frisch, G.W. Trucks, H.B. Schlegel, G.E. Scuseria, M.A. Robb, J.R. Cheeseman, J.A. Montgomery Jr., T. Vreven, K.N. Kudin, J.C. Burant, J.M. Millam, S.S. Iyengar, J. Tomasi, V. Barone, B. Mennucci, M. Cossi, G. Scalmani, N. Rega, G.A. Petersson, H. Nakatsuji, M. Hada, M. Ehara, K. Toyota, R. Fukuda, J. Hasegawa, M. Ishida, T. Nakajima, Y. Honda, O. Kitao, H. Nakai, M. Klene, X. Li, J.E. Knox, H.P. Hratchian, J.B. Cross, C. Adamo, J. Jaramillo, R. Gomperts, R.E. Stratmann, O. Yazyev, A.J. Austin, R. Cammi, C. Pomelli, J.W. Ochterski, P.Y. Ayala, K. Morokuma, G.A. Voth, P. Salvador, J.J. Dannenberg, V.G. Zakrzewski, S. Dapprich, A.D. Daniels, M.C. Strain, O. Farkas, D.K. Malick, A.D. Rabuck, K. Raghavachari, J.B. Foresman, J.V. Ortiz, Q. Cui, A.G. Baboul, S. Clifford, J. Cioslowski, B.B. Stefanov, G. Liu, A. Liashenko, P. Piskorz, I. Komaromi, R.L. Martin, D.J. Fox, T. Keith, M.A. Al- Laham, C.Y. Peng, A. Nanayakkara, M. Challacombe, P.M.W. Gill, B. Johnson, W. Chen, M.W. Wong, C. Gonzalez, and J.A. Pople Gaussian 03 2003 Gaussian Inc. Pittsburgh, PA
25. A.D. Becke Phys. Rev. A 38 1988 3098
26. A.D. Becke J. Chem. Phys. 98 1993 5648
27. C. Lee, W. Yang, and R.G. Parr Phys. Rev. B 37 1988 785
28. M.D. Halls, and K. Raghavachari J. Chem. Phys. 118 2003 10221