Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling

Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

  Ben Hassine, Nizar ^a,b,c   Mercier, Denis ^b   Renaux, Philippe ^b   Parat, Guy ^b   Basrour, Skandar ^c   Waltz, Patrice ^a   Chappaz, Ćdrick ^a   Ancey, Pascal ^a   Blonkowski, Serge ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c TIMA LABORATORY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM NITRIDE; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; MOLYBDENUM; NITRIDES; PERMITTIVITY; SEMICONDUCTOR INSULATOR BOUNDARIES; SMELTING; STRUCTURAL METALS; WEIBULL DISTRIBUTION;

ALN; APPLIED FIELDS; CONDUCTION MECHANISMS; CRITICAL FIELDS; CURRENT VOLTAGES; DIELECTRIC CONSTANTS; DOMINANT MECHANISMS; ELECTRICAL PROPERTIES; LEAKAGE MECHANISMS; LOW FREQUENCIES; METAL ELECTRODES; METAL INSULATOR METALS; METAL-INSULATOR-METAL STRUCTURES; MIM STRUCTURES; NITRIDE STRUCTURES; OPERATING TEMPERATURES; PERMITTIVITY DISPERSIONS; POLYCRYSTALLINE ALUMINUMS; POOLE-FRENKEL; REACTIVE DC MAGNETRON SPUTTERING; ROOM TEMPERATURES; STATISTICAL APPROACHES; STEADY-STATE REGIMES; TEMPERATURE CHARACTERISTICS; TRANSIENT CURRENTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 61449122137     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3081977     Document Type: Article

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