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Volumn 79, Issue 11, 2009, Pages

Beryllium doping of GaAs and GaAsN studied from first principles

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EID: 65249146064     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.115208     Document Type: Article
Times cited : (31)

References (38)
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    • Freysoldt (Ref.) have recently introduced an improved method to include finite-size corrections (cf. the term ΔV in our calculations) for ab initio charged-defect supercell calculations. However, we are not employing their scheme in our present study.
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  • 27
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    • Choosing the Ga as the origin, As and N are located at (1 4, 1 4, 1 4), the center of arsenic tetrahedron at (2 4, 2 4, 2 4), and the center of gallium tetrahedron at (3 4, 3 4, 3 4). The coordinates are in the units of lattice constant.
    • Choosing the Ga as the origin, As and N are located at (1 4, 1 4, 1 4), the center of arsenic tetrahedron at (2 4, 2 4, 2 4), and the center of gallium tetrahedron at (3 4, 3 4, 3 4). The coordinates are in the units of lattice constant.
  • 30
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    • 10.1103/PhysRevLett.86.1789
    • S. B. Zhang and S.-H. Wei, Phys. Rev. Lett. 86, 1789 (2001). 10.1103/PhysRevLett.86.1789
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.