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Volumn 168, Issue 1, 2003, Pages 51-56

Influence of fluorine doping on SiOxFy films prepared from a TEOS/O2/CF4 mixture using a plasma enhanced chemical vapor deposition system

(5) Jeong, Sang Hun a Nishii, Junji b Park, Hyuk Ryul c Kim, Jae Keun a Lee, Byung Teak a

a Chonnam National University (South Korea)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c Mokpo National University (South Korea)

Author keywords

CF4; Fourier transform infrared spectroscopy; Plasma enhanced chemical vapor deposition; Si F2; SiOF; TEOS

Indexed keywords

CHEMICAL BONDS; DOPING (ADDITIVES); ELECTRON MICROSCOPY; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX;

HYDROPHILES;

SILICON COMPOUNDS;

PLASMA TREATMENT;

EID: 0344519620 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/S0257-8972(03)00012-4 Document Type: Article

Times cited : (8)

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