Growth of Ge nanofilms using electrochemical atomic layer deposition, with a bait and switch surface-limited reaction

Journal of the American Chemical Society

Volumn 133, Issue 21, 2011, Pages 8199-8204

  Liang, Xuehai ^a   Zhang, Qinghui ^a   Lay, Marcus D ^a   Stickney, John L ^a  

^a UNIVERSITY OF GEORGIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS SOLUTIONS; ATOMIC LAYER; CU SUBSTRATE; DEPOSIT THICKNESS; GE FILMS; HYDROGEN OVER POTENTIALS; LINEAR FUNCTIONS; NANO FILMS; NUMBER OF CYCLES; RAMAN SPECTRA; SELF-LIMITED; UNDERPOTENTIAL DEPOSITION; XRD PATTERNS;

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; ATOMS; COPPER; DEPOSITS; GOLD; MONOLAYERS; RAMAN SPECTROSCOPY; SOLUTIONS; SURFACE REACTIONS;

GERMANIUM;

COPPER; GERMANIUM; GOLD; HYDROGEN; NANOFILM; TELLURIUM;

AQUEOUS SOLUTION; ARTICLE; ATOMIC PARTICLE; CHEMICAL REACTION; ELECTROCHEMISTRY; RAMAN SPECTROMETRY;

EID: 79957705726     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja109398t     Document Type: Article

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