Anisotropic growth of nanostructures in germanium electroplating

Electrochemical and Solid-State Letters

Volumn 10, Issue 11, 2007, Pages 121-123

  Huang, Q ^a,c   Deligianni, H ^b,c   Romankiw, L T ^a,c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTROLYTES; ELECTROPLATING; GERMANIUM; PASSIVATION;

ANISOTROPIC GROWTH; SILICON SUBSTRATE;

NANOSTRUCTURES;

EID: 34548479683     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2771086     Document Type: Article

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