Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2

Thin Solid Films

Volumn 516, Issue 12, 2008, Pages 4277-4281

  Alonso, M I ^a,b   Garriga, M ^a,b   Bernardi, A ^a,b   Goni A R ^a,b   Lopeandia, A F ^a,b   Garcia, G ^a,b   Rodriguez Viejo J ^a,b   Labar J L ^b,c  

^a CSIC   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Crystallization of a Ge thin films; Ge nanocrystals; Quantum confinement of E1 transition; Spectroscopic ellipsometry

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTALLIZATION; DIELECTRIC PROPERTIES; NANOSTRUCTURES; OPTICAL PROPERTIES; SILICON COMPOUNDS;

BULK-LIKE BEHAVIOR; CRYSTALLIZATION OF A-GE THIN FILMS; GE NANOCRYSTALS;

SPECTROSCOPIC ELLIPSOMETRY;

EID: 40849135985     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.01.003     Document Type: Article

References (20)

1. Kolobov A.V., Wei S.Q., Yan W.S., Oyanagi H., Maeda Y., and Tanaka K. Phys. Rev., B 67 (2003) 195314
2. Das K., NandaGoswami M., Mahapatra R., Kar G.S., Dhar A., Acharya H.N., Maikap S., Lee J.H., and Ray S.K. Appl. Phys. Lett. 84 (2004) 1386
3. Choi W.K., Ng V., Swee V.S.L., Ong C.S., Yu M.B., Rusli R., and Yoon S.F. Scripta. Mater. 44 (2001) 1873
4. Lopeandia A.F., Leon-Gutierrez E., Garcia G., Pi F., Bernardi A., Goñi A.R., Alonso M.I., and Rodriguez-Viejo J. Mater. Sci. Semicond. Process. 9 (2006) 806
5. Aspnes D.E., and Studna A.A. Phys. Rev., B 27 (1983) 985
6. Philipp H. In: Palik E.D. (Ed). Handbook of Optical Constants of Solids vol. 1 (1985), Academic Press, New York Chap. 5
7. Garriga M., Alonso M.I., and Dominguez C. Phys. Status Solidi (b) 215 (1999) 247
8. Donovan T.M., Spicer W.E., Bennett J.M., and Ashley E.J. Phys. Rev., B 2 (1970) 397
9. Viña L., and Cardona M. Physica B 117 (1983) 356
10. Aspnes D.E. Thin Solid Films 89 (1982) 249
11. Tognini P., Andreani L.C., Geddo M., Stella A., Cheyssac P., Kofman R., and Migliori A. Phys. Rev., B 53 (1996) 6992
12. Li P.W., Kuo D.M.T., Liao W.M., and Tsai M.J. Jpn J. Appl. Phys. (Part 1) 43 (2004) 7788
13. Giangregorio M.M., Losurdo M., Ambrico M., Capezzuto P., Bruno G., and Tapfer L. J. Appl. Phys. 99 (2006) 063511
14. Mansour M., En Naciri A., Johann L., Duguay S., Grob J., Stchakovsky M., and Eypert C. J. Phys. Chem. Solids 67 (2006) 1291
15. Williams G.V.M., Bittar A., and Trodahl H.J. J. Appl. Phys. 67 (1990) 1874
16. Zacharias M., and Streitenberger P. Phys. Rev., B 62 (2000) 8391
17. Teo K.L., Kwok S.H., Yu P.Y., and Guha S. Phys. Rev. B 62 (2000) 1584
18. Tyschenko I.E., Talochkin A.B., Cherkov A.G., Zhuravlev K.S., and Yankov R.A. Solid State Commun. 129 (2004) 63
19. Weissker H.-C., Furthmüller J., and Bechstedt F. Phys. Rev., B 65 (2002) 155327
20. Weissker H.-C., Furthmüller J., and Bechstedt F. Phys. Rev., B 65 (2002) 155328