Characteristics improvement of HfO 2 /Ge gate stack structure by fluorine treatment of germanium surface

Applied Surface Science

Volumn 254, Issue 21, 2008, Pages 6932-6936

  Lee, Hyun ^a   Lee, Dong Hun ^a   Kanashima, Takeshi ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Defect passivation; Fluorine; Ge MIS; HfO 2 dielectric; Semi empirical molecular orbital method

Indexed keywords

CHEMICAL BONDS; DEPTH PROFILING; FLUORINE; HAFNIUM OXIDES; INTERFACE STATES; LOGIC GATES; METAL INSULATOR BOUNDARIES; MIS DEVICES; MOLECULAR ORBITALS; ORBITAL CALCULATIONS; SUBSTRATES;

DEFECT PASSIVATION; GATE STACK STRUCTURE; HFO2 DIELECTRIC; INTERFACE DEFECTS; INTERFACE STATE DENSITY; INTERFACIAL LAYER; METAL-INSULATOR-SEMICONDUCTORS; SEMI-EMPIRICAL MOLECULAR ORBITAL METHOD;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 49549122408     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.04.110     Document Type: Article

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