The importance of grain boundaries for the time-dependent mobility degradation in organic thin-film transistors

Chemistry of Materials

Volumn 21, Issue 20, 2009, Pages 4949-4954

  Weitz, R T ^a,d   Amsharov, K ^a   Zschieschang, U ^a   Burghard, M ^a   Jansen, M ^a   Kelsch, M ^b   Rhamati, B ^b   Van Aken, P A ^b   Kern, K ^a,c   Klauk, H ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c EPFL   (Switzerland)

^d HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR STABILITY; AIR-STABLE; DEGRADATION MECHANISM; DEVICE STABILITY; MOBILITY DEGRADATION; N-CHANNEL; ON/OFF RATIO; ORDER OF MAGNITUDE; ORGANIC FIELD-EFFECT TRANSISTORS; ORGANIC SEMICONDUCTOR; ORGANIC THIN FILM TRANSISTORS; PERYLENE TETRACARBOXYLIC DIIMIDE; POLYCRYSTALLINE FILM; SINGLE-CRYSTALLINE; TIME-DEPENDENT;

DEGRADATION; ELECTRON MOBILITY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MESFET DEVICES; SEMICONDUCTING ORGANIC COMPOUNDS; STABILITY; THIN FILM TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 70350263712     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm902145x     Document Type: Article

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