Effects of the Ta content on the microstructure and electrical property of reactively sputtered TaxZr1-xN thin films

Thin Solid Films

Volumn 519, Issue 15, 2011, Pages 4987-4991

  Ruan, Jian Long ^a   Huang, Jow Lay ^a   Lu, Horng Hwa ^b   Chen, J S ^a   Lii, Ding Fwu ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIN YI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Hall effect; Reactive sputtering; Resistivity; TaxZr1 xN films

Indexed keywords

CARRIER DENSITY; ELECTRICAL CONDUCTION; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; FIELD-EMISSION ELECTRONS; FOUR POINT PROBE; HALL EFFECT MEASUREMENT; HALL MEASUREMENTS; IONIC RADIUS; MINIMUM VALUE; REACTIVE MAGNETRON SPUTTERING; RESISTIVITY; TA CONTENT; TAXZR1-XN FILMS; VALENCE ELECTRON;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONS; GRAIN BOUNDARIES; LATTICE CONSTANTS; METALLIC FILMS; MICROSTRUCTURE; PHOTOELECTRON SPECTROSCOPY; PROBES; SODIUM CHLORIDE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM;

TANTALUM;

EID: 79957640621     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.066     Document Type: Conference Paper

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