Microstructural and electrical characteristics of reactively sputtered ZrNx thin films

Journal of Alloys and Compounds

Volumn 478, Issue 1-2, 2009, Pages 671-675

  Ruan, Jian Long ^a   Lii, Ding Fwu ^b   Lu, Horng Hwa ^c   Chen, J S ^a   Huang, Jow Lay ^a,d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c NATIONAL CHIN YI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^d KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

Electrical properties; Microstructure; Thin films; Vapor deposition

Indexed keywords

BASE PRESSURES; ELECTRICAL CHARACTERISTICS; ELECTRICAL PROPERTIES; FIELD-EMISSION ELECTRONS; FOUR-POINT PROBE METHODS; IDEAL VALUES; IMPURITY ATOMS; INTERSTITIAL POSITIONS; MICRO-STRUCTURAL; NITROGEN ATOMS; NITROGEN FLOW RATES; OVER-STOICHIOMETRIC; RESIDUAL OXYGENS; STOICHIOMETRIC COMPOSITIONS; STOICHIOMETRIC FILMS; TYPE STRUCTURES; X- RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

ATOMS; ELECTRIC PROPERTIES; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONS; EMISSION SPECTROSCOPY; FLOW RATE; MICROSTRUCTURE; NITROGEN; OXYGEN; PROBES; SODIUM CHLORIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67349109388     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.11.103     Document Type: Article

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