X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

Electronics Letters

Volumn 44, Issue 9, 2008, Pages 598-599

  Pei, Y ^a   Poblenz, C ^a   Corrion, A L ^a   Chu, R ^a   Shen, L ^a   Speck, J S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY;

DRAIN BIAS; POWER-ADDED-EFFICIENCY (PAE);

ALUMINUM GALLIUM NITRIDE;

EID: 42449083263     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20080669     Document Type: Article

References (15)

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