Effect of deposition conditions and crystallinity of substrate on phase transition of hydrogenated Si films

Journal of the Electrochemical Society

Volumn 158, Issue 7, 2011, Pages

  Kim, Jun Kwan ^a,b   Yun, Sun Jin ^a,b   Lim, Jung Wook ^a,b   Lee, Seong Hyun ^a,b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; ABSORPTION COEFFICIENTS; AMORPHOUS SUBSTRATE; CRYSTALLINE PHASE TRANSITION; CRYSTALLINE VOLUME FRACTION; CRYSTALLINITIES; DEPOSITION CONDITIONS; ETCH RATES; FILM DENSITY; HYDROGEN DILUTION RATIO; MICROCRYSTALLINE SI; PLASMA ETCHING PROCESS; SI FILMS; UV-VIS SPECTROPHOTOMETRY; VARIOUS SUBSTRATES;

ABSORPTION; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DEPOSITION; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGENATION; METALLIC FILMS; PHASE TRANSITIONS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 79957583287     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3592428     Document Type: Article

References (19)

1. J. H. Koh, H. Fujiwara, Y. Lu, C. R. Wronski, and R. W. Collins, Thin Solid Films, 313-314, 469 (1998). 10.1016/S0040-6090(97)00866-3
2. C. R. Wronski and R. W. Collins, Sol. Energy, 77, 877 (2004). 10.1016/j.solener.2004.03.008 (Pubitemid 39605895)
3. H. Fujiwara, M. Kondo, and A. Matsuda, Thin Solid Films, 455-456, 670 (2004). 10.1016/j.tsf.2003.11.233
4. A. Gordijn, J. Loffler, W. M. Arnoldbik, F. D. Tichelaar, J. K. Rath, and R. E. I. Schropp, Sol. Energy Mater. Sol. Cells, 97, 44 (2005).
5. J. Gope, S. Kumar, A. Parashar, P. N. Dixit, C. M. S. Rauthan, O. S. Panwar, D. N. Patel, and S. C. Agarwal, J. Non-Cryst. Solids, 355, 2228 (2009). 10.1016/j.jnoncrysol.2009.07.013
6. L. Prusakova, V. Vavrunkova, M. Netrvalova, J. M. ullerova, and P. Sutta, Vacuum, 85, 502 (2010). 10.1016/j.vacuum.2010.01.021
7. Y. Q. Fu, J. K. Luo, S. B. Milne, A. J. Flewitt, and W. I. Milne, Mater. Sci. Eng., B 124-125, 132 (2005). 10.1016/j.mseb.2005.08.104 (Pubitemid 41662306)
8. D. G. Moon, B. H. Jung, J. N. Lee, B. T. Ahn, and H. B. Im, J. Mater. Sci.: Mater. Electron., 5, 364 (1994). 10.1007/BF00215575
9. E. Srinivasan, D. A. Lloyd, and G. N. Parsons, J. Vac. Sci. Technol., A 15, 77 (1997). 10.1116/1.580480 (Pubitemid 127021626)
10. C. R. Wronski, B. Von Roedern, and A. Kolodziej, Vacuum, 82, 1145 (2008). 10.1016/j.vacuum.2008.01.043
11. A. V. Shah, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz, and U. Graf, Sol. Energy Mater. Sol. Cells, 78, 469 (2003). 10.1016/S0927- 0248(02)00448-8
12. S. Miyazaki, N. Fukuhara, and M. Hirose, J. Non-Cryst. Solids, 266-269, 59 (2000). 10.1016/S0022-3093(99)00729-2
13. A. V. Shah, Thin-Film Silicon Solar Cells, p. 65, EPFL, Swiss (2010).
14. A. V. Shah, H. Schade, M. Vanecek, J. Meier, E. Vallt-Sauvain, N. Wyrsch, U. Kroll, C. Droz, and J. Bailat, Prog. Photovoltaics, 12, 113 (2004). 10.1002/pip.v12:2/3
15. A. Feltrin, B. Strahm, G. Bugnon, F. Sculati-Meillaud, C. Ballif, A. A. Howling, and Ch. Hollenstein, Sol. Energy Mater. Sol. Cells, 94, 432 (2010). 10.1016/j.solmat.2009.10.021
16. S. Ray, S. Mukhopadhyay, T. Jana, and R. Carius, J. Non-Cryst. Solids, 299-302, 761 (2002). 10.1016/S0022-3093(01)01122-X (Pubitemid 34405803)
17. Y. He, C. Yin, G. Cheng, L. Wang, and X. Liu, J. Appl. Phys., 75, 797 (1994). 10.1063/1.356432
18. M. H. Yoon, K. T. Im, J. H. Yang, and S. W. Lim, Physica B, 405, 1526 (2010). 10.1016/j.physb.2009.12.034
19. O. Cubero, F. - J. Haug, Y. Ziegler, L. Sansonnens, P. Couty, D. Fischer, and C. Ballif, Sol. Energy Mater. Sol. Cells, 95, 606 (2011). 10.1016/j.solmat.2010.09.026