Reduction of the phosphorous cross-contamination in nip solar cells prepared in a single-chamber PECVD reactor

Solar Energy Materials and Solar Cells

Volumn 95, Issue 2, 2011, Pages 606-610

  Cubero, O ^a,c   Haug, F J ^a   Ziegler, Y ^b   Sansonnens, L ^b   Couty, P ^b   Fischer, D ^b   Ballif, C ^a  

^a EPFL   (Switzerland)

^b VHF Technologies   (Switzerland)

^c UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

Author keywords

nip; PECVD; Phosphorous contamination; Single chamber process; Solar cells

Indexed keywords

AMORPHOUS SILICON (A-SI:H); CROSS CONTAMINATION; DC BIAS VOLTAGE; ETCHING PROCESS; FILL FACTOR; HYDROGEN ETCHING; I-LAYER; INITIAL EFFICIENCY; INTRINSIC LAYER; LAYER DEPOSITION; LIGHT SOAKING; NEW APPROACHES; NIP; NOVEL PROCESS; PECVD; PHOSPHOROUS CONTAMINATION; REACTOR WALLS; SECONDARY ION MASS SPECTROSCOPY; SINGLE-CHAMBER PROCESS; STABILIZED EFFICIENCY; STABILIZED STATE; TANDEM SOLAR CELLS;

CONTAMINATION; ETCHING; HYDROGEN; PHOSPHORUS; PLASMA DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SOLAR CELLS; WALLS (STRUCTURAL PARTITIONS);

AMORPHOUS SILICON;

EID: 78650701812     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.09.026     Document Type: Article

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