Input silane concentration effect on the a-Si:H to μ c - Si : H transition width

Solar Energy Materials and Solar Cells

Volumn 94, Issue 3, 2010, Pages 432-435

  Feltrin, A ^a   Strahm, B ^a   Bugnon, G ^a   Sculati Meillaud, F ^a   Ballif, C ^a   Howling, A A ^a   Hollenstein, Ch ^a  

^a EPFL   (Switzerland)

Author keywords

Microstructure transition; Silane hydrogen discharge; Silicon thin film

Indexed keywords

A-SI:H; ANALYTICAL MODEL; DEPLETION LEVEL; ELECTRON DENSITIES; SEMI-EMPIRICAL APPROACH; SILANE CONCENTRATIONS; SILANE-HYDROGEN DISCHARGE; SILICON THIN FILM; TRANSITION WIDTHS;

MICROCRYSTALLINE SILICON; MICROSTRUCTURE; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILMS;

AMORPHOUS SILICON;

EID: 75149162766     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.10.021     Document Type: Article

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