Residual stress in amorphous and nanocrystalline Si films prepared by PECVD with hydrogen dilution

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 132-137

  Fu, Y Q ^a   Luo, J K ^a   Milne, S B ^a   Flewitt, A J ^a   Milne, W I ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A Si:H; Hydrogen; nc Si; PECVD; Stress

Indexed keywords

CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SILICON; X RAY ANALYSIS;

CURVATURE METHOD; NANOCRYSTALLINE SI FILMS; STRESS FORMATION;

NANOSTRUCTURED MATERIALS;

EID: 27944454874     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.104     Document Type: Conference Paper

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