Optical and structural characterization of inhomogeneities in a-Si:H to μc-Si transition

Vacuum

Volumn 85, Issue 4, 2010, Pages 502-505

  Prusakova L ^a   Vavrunkova V ^a   Netrvalova M ^a   Mullerova J ^b   Sutta P ^a  

^a UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

^b UNIVERSITY OF ILINA   (Slovakia)

Author keywords

A Si:H film; PE CVD; Phase transition; Raman spectroscopy; X ray diffraction

Indexed keywords

A-SI:H; A-SI:H FILM; DIFFERENT SIZES; DIFFERENT THICKNESS; EXTINCTION COEFFICIENTS; GRAIN SIZE; HYDROGEN DILUTION; HYDROGENATED SILICON; INHOMOGENEITIES; MEDIUM RANGE; OPTICAL ANALYSIS; OPTICAL ENERGY BAND GAP; PE-CVD; RF-PECVD; SPECTRAL REFRACTIVE INDICES; STRUCTURAL CHARACTERIZATION; XRD ANALYSIS;

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; DIFFRACTION; HYDROGEN; HYDROGENATION; METALLIC FILMS; PHASE TRANSITIONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; SILANES; SPECTRUM ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

AMORPHOUS SILICON;

EID: 78649678434     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.01.021     Document Type: Conference Paper

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