Facile fabrication of all-SWNT field-effect transistors

Nano Research

Volumn 4, Issue 6, 2011, Pages 580-588

  Aikawa, Shinya ^a,b   Xiang, Rong ^a,c   Einarsson, Erik ^a   Chiashi, Shohei ^a   Shiomi, Junichiro ^a   Nishikawa, Eiichi ^b   Maruyama, Shigeo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c SUN YAT SEN UNIVERSITY   (China)

Author keywords

field effect transistor; interfacial dipole; patterned synthesis; Schottky barrier; self assembled monolayer; Single walled carbon nanotube

Indexed keywords

EID: 79957444064     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-011-0114-0     Document Type: Article

References (47)

1. Durkop, T.; Getty, S. A.; Cobas, E.; Fuhrer, M. S. Extraordinary mobility in semiconducting carbon nanotubes. Nano Lett. 2004, 4, 35-39.
2. Martel, R.; Wong, H. S. P.; Chan, K.; Avouris, P. Carbon nanotube field effect transistors for logic applications. Proc. IEDM2001, 159-161.
3. Appenzeller, J.; Lin, Y. M.; Knoch, J.; Avouris, Ph. Band-to-band tunneling in carbon nanotube field-effect transistors. Phys. Rev. Lett. 2004, 93, 196805.
4. Lu, Y.; Bangsaruntip, S.; Wang, X.; Zhang, L.; Nishi, Y.; Dai, H. DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high κ dielectrics for nanotube transistors with 60 mv/decade switching. J. Am. Chem. Soc. 2006, 128, 3518-3519.
5. Weitz, R. T.; Zschieschang, U.; Effenberger, F.; Klauk, H.; Burghard, M.; Kern, K. High-performance carbon nanotube field effect transistors with a thin gate dielectric based on a self-assembled monolayer. Nano Lett. 2007, 7, 22-27.
6. Javey, A.; Guo, J.; Wang, Q.; Lundstrom, M.; Dai, H. Ballistic carbon nanotube field-effect transistors. Nature2003, 424, 654-657.
7. Tans, S. J.; Verschueren, A. R. M.; Dekker, C. Room-temperature transistor based on a single carbon nanotube. Nature1998, 393, 49-52.
8. Martel, R.; Schmidt, T.; Shea, H. R.; Hertel, T.; Avouris, Ph. Single- and multi-wall carbon nanotube field-effect transistors. Appl. Phys. Lett. 1998, 73, 2447-2449.
9. Snow, E. S.; Novak, J. P.; Campbell, P. M.; Park, D. Random networks of carbon nanotubes as an electronic material. Appl. Phys. Lett. 2003, 82, 2145-2147.
10. Kocabas, C.; Shim, M.; Rogers, J. A. Spatially selective guided growth of high-coverage arrays and random networks of single-walled carbon nanotubes and their integration into electronic devices. J. Am. Chem. Soc. 2006, 128, 4540-4541.
11. Zhou, W.; Ding, L.; Yang, S.; Liu, J. Orthogonal orientation control of carbon nanotube growth. J. Am. Chem. Soc. 2010, 132, 336-341.
12. Cao, Q.; Zhu, Z. T.; Lemaitre, M. G.; Xia, M. G.; Shim, M.; Rogers, J. A. Transparent flexible organic thin-film transistors that use printed single-walled carbon nanotube electrodes. Appl. Phys. Lett. 2006, 88, 113511.
13. Tsai, T. Y.; Lee, C. Y.; Tai, N. H.; Tuan, W. H. Transfer of patterned vertically aligned carbon nanotubes onto plastic substrates for flexible electronics and field emission devices. Appl. Phys. Lett. 2009, 95, 013107.
14. Buia, C.; Buldum, A.; Lu, J. P. Quantum interference effects in electronic transport through nanotube contacts. Phys. Rev. B2003, 67, 113409.
15. Garrett, M. P.; Ivanov, I. N.; Gerhardt, R. A.; Puretzky, A. A.; Geohegan, D. B. Separation of junction and bundle resistance in single wall carbon nanotube percolation networks by impedance spectroscopy. Appl. Phys. Lett. 2010, 97, 163105.
16. Jang, S.; Jang, H.; Lee, Y.; Suh, D.; Baik, S.; Hong, B. H.; Ahn, J. H. Flexible, transparent single-walled carbon nanotube transistors with graphene electrodes. Nanotechnology2010, 21, 425201.
17. Kaskela, A.; Nasibulin, A. G.; Timmermans, M. Y.; Aitchison, B.; Papadimitratos, A.; Tian, Y.; Zhu, Z.; Jiang, H.; Brown, D. P.; Zakhidov, A.; Kauppinen, E. I. Aerosol-synthesized SWCNT networks with tunable conductivity and transparency by a dry transfer technique. Nano Lett. 2010, 10, 4349-4355.
18. Ren, Z. F.; Huang, Z. P.; Wang, D. Z.; Wen, J. G.; Xu, J. W.; Wang, J. H.; Calvet, L. E.; Chen, J.; Klemic, J. F.; Reed, M. A. Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot. Appl. Phys. Lett. 1999, 75, 1086-1088.
19. Franklin, N. R.; Li, Y.; Chen, R. J.; Javey, A.; Dai, H. Patterned growth of single-walled carbon nanotubes on full 4-inch wafers. Appl. Phys. Lett. 2001, 79, 4571-4573.
20. Huang, S.; Dai, L.; Mau, A. W. H. Controlled fabrication of large-scale aligned carbon nanofiber/nanotube patterns by photolithography. Adv. Mater. 2002, 14, 1140-1143.
21. Wei, B. Q.; Vajtai, R.; Jung, Y.; Ward, J.; Zhang, R.; Ramanath, G.; Ajayan, P. M. Microfabrication technology: Organized assembly of carbon nanotubes. Nature2002, 416, 495-496.
22. Xiang, R.; Wu, T.; Einarsson, E.; Suzuki, Y.; Murakami, Y.; Shiomi, J.; Maruyama, S. High-precision selective deposition of catalyst for facile localized growth of single-walled carbon nanotubes. J. Am. Chem. Soc. 2009, 131, 10344-10345.
23. Soh, H. T.; Quate, C. F.; Morpurgo, A. F.; Marcus, C. M.; Kong, J.; Dai, H. Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes. Appl. Phys. Lett. 1999, 75, 627-629.
24. Ohno, Y.; Iwatsuki, S.; Hiraoka, T.; Okazaki, T.; Kishimoto, S.; Maezawa, K.; Shinohara, H.; Mizutani, T. Position-controlled carbon nanotube field-effect transistors fabricated by chemical vapor deposition using patterned metal catalyst. Jpn. J. Appl. Phys. 2003, 42, 4116-4119.
25. Murakami, Y.; Miyauchi, Y.; Chiashi, S.; Maruyama, S. Direct synthesis of high-quality single-walled carbon nanotubes on silicon and quartz substrates. Chem. Phys. Lett. 2003, 377, 49-54.
26. Maruyama, S.; Kojima, R.; Miyauchi, Y.; Chiashi, S.; Kohno, M. Low-temperature synthesis of high-purity single-walled carbon nanotubes from alcohol. Chem. Phys. Lett. 2002, 360, 229-234.
27. Murakami, Y.; Chiashi, S.; Miyauchi, Y.; Hu, M. H.; Ogura, M.; Okubo, T.; Maruyama, S. Growth of vertically aligned single-walled carbon nanotube films on quartz substrates and their optical anisotropy. Chem. Phys. Lett. 2004, 385, 298-303.
28. Maruyama, S.; Einarsson, E.; Murakami, Y.; Edamura, T. Growth process of vertically aligned single-walled carbon nanotubes. Chem. Phys. Lett. 2005, 403, 320-323.
29. Einarsson, E.; Kadowaki, M.; Ogura, K.; Okawa, J.; Xiang, R.; Zhang, Z.; Yamamoto, Y.; Ikuhara, Y.; Maruyama, S. Growth mechanism and internal structure of vertically aligned single-walled carbon nanotubes. J. Nanosci. Nanotechnol. 2008, 8, 6093-6098.
30. Kreupl, F.; Graham, A. P.; Duesberg, G. S.; Steinhögl, W.; Liebau, M.; Unger, E.; Hönlein, W. Carbon nanotubes in interconnect applications. Microelectron. Eng. 2002, 64, 399-408.
31. Nihei, M.; Kawabata, A.; Kondo, D.; Horibe, M.; Sato, S.; Awano, Y. Electrical properties of carbon nanotube bundles for future via interconnects. Jpn. J. Appl. Phys. 2005, 44, 1626-1628.
32. Wang, T.; Jeppson, K.; Olofsson, N.; Campbell, E. E. B.; Liu, J. Through silicon vias filled with planarized carbon nanotube bundles. Nanotechnology2009, 20, 485203.
33. Fuhrer, M. S.; Nygård, J.; Shih, L.; Forero, M.; Yoon, Y. G.; Mazzoni, M. S. C.; Choi, H. J.; Ihm, J.; Louie, S. G.; Zettl, A.; McEuen, P. L. Crossed nanotube junctions. Science2000, 288, 494-497.
34. Nirmalraj, P. N.; Lyons, P. E.; De, S.; Coleman, J. N.; Boland, J. J. Electrical connectivity in single-walled carbon nanotube networks. Nano Lett. 2009, 9, 3890-3895.
35. Geng, H. Z.; Kim, K. K.; So, K. P.; Lee, Y. S.; Chang, Y.; Lee, Y. H. Effect of acid treatment on carbon nanotube-based flexible transparent conducting films. J. Am. Chem. Soc. 2007, 129, 7758-7759.
36. Futaba, D. N.; Hata, K.; Yamada, T.; Hiraoka, T.; Hayamizu, Y.; Kakudate, Y.; Tanaike, O.; Hatori, H.; Yumura, M.; Iijima, S. Shape-engineerable and highly densely packed single-walled carbon nanotubes and their application as super-capacitor electrodes. Nat. Mater. 2006, 5, 987-994.
37. Martel, R.; Derycke, V.; Lavoie, C.; Appenzeller, J.; Chan, K. K.; Tersoff, J.; Avouris, Ph. Ambipolar electrical transport in semiconducting single-wall carbon nanotubes. Phys. Rev. Lett. 2001, 87, 256805.
38. Wind, S. J.; Appenzeller, J.; Martel, R.; Derycke, V.; Avouris, Ph. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes. Appl. Phys. Lett. 2002, 80, 3817-3819.
39. Homma, Y.; Takagi, D.; Kobayashi, Y. Suspended architecture formation process of single-walled carbon nanotubes. Appl. Phys. Lett. 2006, 88, 023115.
40. Abrams, Z. R.; Hanein, Y. Tube-tube and tube-surface interactions in straight suspended carbon nanotube structures. J. Phys. Chem. B2006, 110, 21419-21423.
41. Xiang, R.; Luo, G.; Yang, Z.; Zhang, Q.; Qian, W.; Wei, F. Temperature effect on the substrate selectivity of carbon nanotube growth in floating chemical vapor deposition. Nanotechnology2007, 18, 415703.
42. Hu, M. H.; Murakami, Y.; Ogura, M.; Maruyama, S.; Okubo, T. Morphology and chemical state of Co-Mo catalysts for growth of single-walled carbon nanotubes vertically aligned on quartz substrates. J. Catal. 2004, 225, 230-239.
43. Suzuki, S.; Bower, C.; Watanabe, Y.; Zhou, O. Work functions and valence band states of pristine and Cs-intercalated single-walled carbon nanotube bundles. Appl. Phys. Lett. 2000, 76, 4007-4009.
44. Heinze, S.; Tersoff, J.; Martel, R.; Derycke, V.; Appenzeller, J.; Avouris, Ph. Carbon nanotubes as Schottky barrier transistors. Phys. Rev. Lett. 2002, 89, 106801.
45. Ishii, H.; Sugiyama, K.; Ito, E.; Seki, K. Energy level alignment and interfacial electronic structures at organic/metal and organic/organic interfaces. Adv. Mater. 1999, 11, 605-625.
46. Nosho, Y.; Ohno, Y.; Kishimoto, S.; Mizutani, T. n-Type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes. Appl. Phys. Lett. 2005, 86, 073105.
47. Kim, W.; Javey, A.; Vermesh, O.; Wang, Q.; Li, Y.; Dai, H. Hysteresis caused by water molecules in carbon nanotube field-effect transistors. Nano Lett. 2003, 3, 193-198.