Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

Solid-State Electronics

Volumn 60, Issue 1, 2011, Pages 122-127

  Hirayama, Kana ^a   Yoshino, Keisuke ^a   Ueno, Ryuji ^a   Iwamura, Yoshiaki ^a   Yang, Haigui ^a   Wang, Dong ^a   Nakashima, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

DLTS; Ge MOS; GeO2 Ge interface; Interface states density; Surface passivation

Indexed keywords

DLTS; GE-MOS; GEO2/GE INTERFACE; INTERFACE STATES DENSITY; SURFACE PASSIVATION;

CAPACITORS; DEEP LEVEL TRANSIENT SPECTROSCOPY; FABRICATION; GERMANIUM; OXYGEN; PASSIVATION; SILICON COMPOUNDS;

MOS CAPACITORS;

EID: 79955524959     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.01.030     Document Type: Article

References (16)

1. D. Kuzum, T. Krishnamohan, A.J. Pethe, A.K. Okyay, Y. Oshima, Y. Sun, J.P. McVittie, P.A. Pianetta, P.C. McIntyre, and K.C. Saraswat Ge-interface engineering with ozone oxidation for low interface-state density IEEE Electron Dev Lett 29 2008 328 330 (Pubitemid 351486773)
2. 2/germanium nitride/germanium metal-insulator-semiconductor structures Appl Phys Lett 90 2007 072911-1 072911-3
3. T. Sugawara, Y. Oshima, R. Sreenivasan, and P.C. McIntyre Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers Appl Phys Lett 90 2007 112912-1 112912-3
4. 2 Appl Phys Lett 93 2008 161909-1 161909-3
5. 2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation Appl Phys Lett 93 2008 032104-1 032104-3
6. K. Prabhakaran, F. Maeda, Y. Watanabe, and T. Ogino Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference Thin Solid Films 369 2000 289 292
7. 2/Ge metal-insulator-semiconductor characteristics Jpn J Appl Phys 47 2008 2349 2353
8. 2/Ge metal-oxide-semiconductor devices Appl Phys Lett 94 2009 202112-1 202112-3
9. K. Prabhakaran, and T. Ogino Oxidation of Ge(1 0 0) and Ge(1 1 1) surfaces: an UPS and XPS study Surf Sci 325 1995 263 271
10. H. Nakashima, D. Wang, T. Noguchi, K. Itani, J. Wang, and L. Zhao Method for detecting defects in silicon-on-insulator using capacitance transient spectroscopy Jpn J Appl Phys 43 2004 2402 2408
11. D. Wang, M. Ninomiya, M. Nakamae, and H. Nakashima Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements Appl Phys Lett 86 2005 122111-1 122111-3
12. S.M. Sze Physics of semiconductor devices 2nd ed. 1981 John Wiley and Sons New York p. 396
13. S.M. Sze Physics of semiconductor devices 2nd ed. 1981 John Wiley and Sons New York p. 373
14. K. Martens, C.O. Chui, G. Brammertz, B.D. Jaeger, D. Kuzum, M. Meuris, M.M. Heyns, T. Krishnamohan, K. Saraswat, H.E. Maes, and G. Groeseneken On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates IEEE Trans ED 55 2008 547 556 (Pubitemid 351297540)
15. 2 J Appl Phys 40 1969 278 283
16. D.W. Gao, Y. Kashiwazaki, K. Muraoka, H. Nakashima, K. Furukawa, Y.C. Liu, K. Shibata, and T. Tsurushima Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma J Appl Phys 82 1997 5680 5685 (Pubitemid 127584761)