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Volumn 50, Issue 4 PART 2, 2011, Pages

Fabrication of Ge metal-oxide-semiconductor capacitors with high-quality interface by ultrathin SiO2/GeO2 bilayer passivation and postmetallization annealing effect of al

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; ELECTRICAL PASSIVATION; GE SURFACES; HIGH-QUALITY INTERFACE; INSULATING FILM; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR STRUCTURES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NOVEL METHODS; POST-METALLIZATION ANNEALING; SURFACE PREPARATION; THERMAL ETCHING; ULTRA-THIN; VACUUM-ANNEALING;

EID: 79955412267     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DA10     Document Type: Article
Times cited : (26)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.