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Volumn 50, Issue 4 PART 2, 2011, Pages
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Fabrication of Ge metal-oxide-semiconductor capacitors with high-quality interface by ultrathin SiO2/GeO2 bilayer passivation and postmetallization annealing effect of al
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Author keywords
[No Author keywords available]
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Indexed keywords
BI-LAYER;
ELECTRICAL PASSIVATION;
GE SURFACES;
HIGH-QUALITY INTERFACE;
INSULATING FILM;
INTERFACE STATE DENSITY;
METAL OXIDE SEMICONDUCTOR STRUCTURES;
METAL-OXIDE-SEMICONDUCTOR CAPACITORS;
NOVEL METHODS;
POST-METALLIZATION ANNEALING;
SURFACE PREPARATION;
THERMAL ETCHING;
ULTRA-THIN;
VACUUM-ANNEALING;
ALUMINUM;
ANNEALING;
CAPACITORS;
GERMANIUM;
METAL ANALYSIS;
MOS CAPACITORS;
SILICON COMPOUNDS;
PASSIVATION;
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EID: 79955412267
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.50.04DA10 Document Type: Article |
Times cited : (26)
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References (14)
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