Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlN distributed Bragg reflector on (111)Si

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 163-167

  Semond, F ^a   Antoine Vincent, N ^b   Schnell, N ^a   Malpuech, G ^b   Leroux, M ^a   Massies, J ^a   Disseix, P ^b   Leymarie, J ^b   Vasson, A ^b  

^a CRHEA CNRS   (France)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; ELECTRON REFLECTION; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; STRAIN; TENSILE STRESS;

ALUMINUM GALLIUM NITRIDE; BRAGG MIRROR; DISLOCATION DENSITY; DISTRIBUTED BRAGG REFLECTOR; TENSILE STRAIN;

SEMICONDUCTOR GROWTH;

EID: 0035123141     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200101)183:1<163::AID-PSSA163>3.0.CO;2-0     Document Type: Article

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