Ion-beam-induced crystal grain nucleation in amorphous silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 917-921

  Hofgen A ^a   Heera, V ^a   Mucklich A ^a   Eichhorn, F ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS MATERIALS; CRYSTALLIZATION; HYDROGEN; ION BEAMS; ION IMPLANTATION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PRECIPITATION (CHEMICAL); TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS SILICON CARBIDE; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; GRAZING INCIDENCE; ION BEAM INDUCED CRYSTALLIZATION; NANOCRYSTALLINE PHASE; THERMAL CRYSTALLIZATION;

SILICON CARBIDE;

EID: 0037818596     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00937-4     Document Type: Article

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