Temperature-dependent absorption measurements of excitons in GaN epilayers

Applied Physics Letters

Volumn 71, Issue 14, 1997, Pages 1981-1983

  Fischer, A J ^a   Shan, W ^a   Song, J J ^a   Chang, Y C ^b   Horning, R ^c   Goldenberg, B ^c  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001315394     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119761     Document Type: Article

References (22)

1. S. Nakamura, S. Masayuki, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and K. Hiroyuki, Appl. Phys. Lett. 70, 1417 (1997).
2. W. Shan, X. C. Xie, J. J. Song, and B. Goldenberg, Appl. Phys. Lett. 66, 2512 (1995).
3. W. Shan, B. D. Little, A. J. Fischer, J. J. Song, B. Goldenberg, W. G. Perry, M. D. Bremser, and R. F. Davis, Phys. Rev. B 54, 16369 (1996).
4. W. Shan, T. J. Schmidt, R. J. Hauenstein, J. J. Song, and B. Goldenberg, Appl. Phys. Lett. 66, 3492 (1995).
5. S. Chichibu, H. Okumura, S. Nakamura, G. Feuillet, T. Azuhata, T. Sota, and S. Yoshida, Jpn. J. Appl. Phys., Part 1 36, 1976 (1997); S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, J. Appl. Phys. 79, 2784 (1996).
6. S. Chichibu, H. Okumura, S. Nakamura, G. Feuillet, T. Azuhata, T. Sota, and S. Yoshida, Jpn. J. Appl. Phys., Part 1 36, 1976 (1997); S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, J. Appl. Phys. 79, 2784 (1996).
7. A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura, J. Appl. Phys. 81, 417 (1997).
8. C. F. Li, Y. S. Huang, L. Malikova, and F. H. Pollak, Phys. Rev. B 55, 9251 (1997).
9. R. Dingle, D. D. Sell, S. E. Stokowski, and M. Ilegems, Phys. Rev. B 4, 1211 (1971).
10. H, Amano, N. Watanabe, N. Koide, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 32, L1000 (1993).
11. M. O. Manasreh, Phys. Rev. B 53, 16425 (1996).
12. J. Petalas, S. Logothetidis, S. Boultadakis, M. Alouani, and J. M. Wills, Phys. Rev. B 52, 8082 (1995).
13. R. Planel, A. Bonnot, and C. Benoit à la Guillaume. Phys. Status Solidi B 58, 251 (1973).
14. E. Gutsche and J. Voigt, Proceedings of International Conference of II-VI Semiconductors, edited by D. G. Thomas (Benjamin, New York, 1967), p. 337.
15. D. Behr, J. Wagner, J. Schneider, H. Amano, and I. Akasaki, Appl. Phys. Lett. 68, 2404 (1996).
16. S. J. Hwang, W. Shan, J. J. Song, and Y. C. Chang (unpublished); B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, and I. Akasaki, "Free Excitons in GaN," MRS Internet Journal: Nitride Semiconductor Research, Vol. 1 Article 2 (1996).
17. S. J. Hwang, W. Shan, J. J. Song, and Y. C. Chang (unpublished); B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, and I. Akasaki, "Free Excitons in GaN," MRS Internet Journal: Nitride Semiconductor Research, Vol. 1 Article 2 (1996).
18. D. S. Chemla, D. A. Miller, P. W. Smith, A. C. Gossard, and W. Wiegmann, IEEE J. Quantum Electron. QE-20, 265 (1984).
19. Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967).
20. D. S. Kim, J. Shah, J. E. Cunningham, T. C. Damen, W. Schäfer, M. Hartmann, and S. Schmitt-Rink, Phys. Rev. Lett. 68, 1006 (1992).
21. A. J. Fischer, D. S. Kim, J. Hays, W. Shan, J. J. Song, D. B. Eason, J. Ren, J. F. Schetzina, H. Luo, J. K. Furdyna, Z. Q. Zhu, T. Yao, and W. Schäfer, Phys. Rev. Lett. 73, 2368 (1994).
22. A. J. Fischer. W. Shan, G. H. Park, J. J. Song, D. S. Kim, D. S. Yee, R. Horning and B. Goldenberg, Phys. Rev. B 56, 1077 (1997).