Annealing behavior of phosphorus in native oxide films on heavily phosphorus doped silicon

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 556-560

  Ying, W B ^a   Mizokawa, Y ^a   Yu, Y B ^a   Kamiura, Y ^a   Iida, M ^b   Kawamoto, K ^b  

^a Osaka Prefecture University   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL REACTIONS; COMPOSITION; DOPING (ADDITIVES); INTERFACES (MATERIALS); OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL STRUCTURE; IN DEPTH PROFILES; NATIVE OXIDE FILMS; PHOSPHORUS REDISTRIBUTION; THERMAL OXIDES;

PHOSPHORUS;

EID: 0030564302     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00338-8     Document Type: Article

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