Phosphorus diffusion from doped polysilicon through ultra-thin SiO2 films into Si substrates

Japanese journal of applied physics

Volumn 39, Issue 10 A, 2000, Pages

  Tsubo, Yumiko ^a   Komatsu, Yukio ^a   Saito, Kazumasa ^a   Matsumoto, Satoru ^a   Sato, Yoshiyuki ^b   Yamamoto, Ikunao ^c   Yamashita, Yoshifumi ^c  

^a KEIO UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

^c OKAYAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; MATHEMATICAL MODELS; OXYGEN; PHOSPHORUS; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; SUBSTRATES; ULTRATHIN FILMS;

DIFFUSIVITY; SEGREGATION COEFFICIENT; TWO BOUNDARY DIFFUSION MODEL;

DIFFUSION;

EID: 0034290984     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l955     Document Type: Article

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