Deformation-induced dislocations in 4H-SiC and GaN

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 369-375

  Hong, M H ^a   Samant, A V ^a   Orlov, V ^a   Farber, B ^a   Kisielowski, C ^b   Pirouz, P ^a  

^a Case Western Reserve University   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; DISLOCATIONS (CRYSTALS); FILM GROWTH; NUMERICAL METHODS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; STACKING FAULTS; SUBSTRATES; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; VICKERS HARDNESS TESTING;

BULK SINGLE CRYSTALS; BURGERS VECTOR; DEFORMATION INDUCED DISLOCATIONS; SAPPHIRE SUBSTRATES; VICKERS INDENTATION; WEAK BEAM METHOD;

SINGLE CRYSTALS;

EID: 0033350425     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-369     Document Type: Conference Paper

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