Mechanical properties of the GaN thin films deposited on sapphire substrate

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 701-705

  Yu, G ^a   Ishikawa, H ^a   Egawa, T ^a   Soga, T ^a   Watanabe, J ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaN; Hardness; Nanoindentation; Shear stress

Indexed keywords

DEFORMATION; HARDNESS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SHEAR STRESS;

GALLIUM NITRIDE; NANOINDENTATION;

SEMICONDUCTING FILMS;

EID: 0032092386     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00262-0     Document Type: Article

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