M-plane GaN(1 1̄ 0 0) grown on γ-LiAlO2(1 0 0): Nitride semiconductors free of internal electrostatic fields

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 437-441

  Waltereit, P ^a,b   Brandt, O ^a   Ramsteiner, M ^a   Trampert, A ^a   Grahn, H T ^a   Menniger, J ^a   Reiche, M ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b University of California   (United States)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides; B2. Piezoelectric materials; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROMAGNETIC WAVE POLARIZATION; ELECTROSTATICS; GALLIUM NITRIDE; LITHIUM COMPOUNDS; MORPHOLOGY; PHOTOLUMINESCENCE; PHOTOSENSITIVITY; PIEZOELECTRIC MATERIALS; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

INTERNAL ELECTROSTATIC FIELDS; TIME-RESOLVED LUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035399211     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00739-4     Document Type: Conference Paper

References (16)