Investigation of single n-ZnO/i-ZnO/p-GaN-heterostructed nanorod ultraviolet photodetectors

IEEE Photonics Technology Letters

Volumn 23, Issue 11, 2011, Pages 706-708

  Lee, Hsin Ying ^a   Huang, Hung Lin ^a   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Atomic force microscopy system; n i p heterostructural nanorod photodetectors; p GaN; ZnO

Indexed keywords

ATOMIC FORCE; CONDUCTIVE ATOMIC FORCE MICROSCOPY; N-I-P HETEROSTRUCTURAL NANOROD PHOTODETECTORS; NATIVE DEFECT; P-GAN; PHOTORESPONSIVITY; REVERSE BIAS VOLTAGE; ULTRA-VIOLET PHOTODETECTORS; ZNO;

ATOMIC FORCE MICROSCOPY; DANGLING BONDS; DISTILLATION; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SURFACE DEFECTS; ZINC OXIDE;

NANORODS;

EID: 79955970608     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2131126     Document Type: Article

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