Soluble fullerene-based n-channel organic thin-film transistors printed by using a polydimethylsiloxane stamp

ACS Applied Materials and Interfaces

Volumn 3, Issue 3, 2011, Pages 836-841

  Horii, Yoshinori ^a,b   Ikawa, Mitsuhiro ^a   Chikamatsu, Masayuki ^a   Azumi, Reiko ^a   Kitagawa, Masahiko ^b   Konishi, Hisatoshi ^b   Yase, Kiyoshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOTTORI UNIVERSITY   (Japan)

Author keywords

complementary inverter; n channelmaterial; organic field effect transistor; organic semiconductor; polydimethylsiloxane Stamp; self assembled monolayer; soluble fullerene derivative; transfer printing

Indexed keywords

COMPLEMENTARY INVERTERS; N-CHANNELMATERIAL; ORGANIC SEMICONDUCTOR; POLYDIMETHYLSILOXANE STAMP; SOLUBLE FULLERENE DERIVATIVE; TRANSFER PRINTING;

BUTYRIC ACID; ELECTRON MOBILITY; ESTERS; FIELD EFFECT TRANSISTORS; FREE ENERGY; FULLERENES; HIGH ELECTRON MOBILITY TRANSISTORS; PRINTING; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICONES; SURFACE TREATMENT; THIN FILM TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

DIMETICONE; FULLERENE DERIVATIVE; ORGANIC COMPOUND; POLYDIMETHYLDIPHENYLSILOXANE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; SOLUBILITY; SURFACE PROPERTY;

CRYSTALLIZATION; DIMETHYLPOLYSILOXANES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; FULLERENES; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; NANOTECHNOLOGY; ORGANIC CHEMICALS; SOLUBILITY; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC;

EID: 79955968802     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am101193y     Document Type: Article

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