Characteristics of field effect transistors based on fullerene derivatives

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 8-11, 2007, Pages

  Morita, Takeomi ^a   Takashima, Wataru ^a   Kaneto, Keiichi ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Absorption spectra; Field effect transistors; Fullerene derivatives; Mobility; PCBM

Indexed keywords

ABSORPTION SPECTRA; DERIVATIVES; FULLERENES; SPIN COATING; THRESHOLD VOLTAGE; TRANSPORT PROPERTIES;

FIELD EFFECT MOBILITY; FIELD INDUCED CARRIERS;

FIELD EFFECT TRANSISTORS;

EID: 34547901391     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L256     Document Type: Article

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